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IRFB3607PBF
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFETR |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |
| Power Dissipation (Max) | 140W(Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhms @ 46A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-220AB |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 750
MOQ:50
SPQ:50
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 50 - 149 | $1.007 |
| 150 - 299 | $0.884 |
| 300 - 699 | $0.815 |
| 700 - 1,649 | $0.728 |
| 1,650 - | $0.698 |
| - | - |
| - | - |
| - | - |
