- Top >
- 半导体 >
- 分立半导体 >
- IGBT discrete/single >
- Single >
- RGT16NS65DGTL(ROHM)
产品属性
| Category | 分立半导体 Single |
| Manufacturer | ROHM |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 16 A |
| Power - Max | 94 W |
| Td (on/off) @ 25°C | 13ns/33ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 8A |
| Gate Charge | 21 nC |
| Test Condition | 400V, 8A, 10Ohms, 15V |
| Operating Temperature Range | -40°C ~ +175°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | LPDS |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.





