2SB906-Y
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | TOSHIBA |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Maximum) | -60 V |
| Current - Collector (Ic) (Max) | -3 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 |
| Vce saturation (max) @lb, Ic | -1.7V |
| Mounting Type | Surface Mount |
| Device Package | New PW-Mold |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
