- Top >
- 半导体 >
- 分立半导体 >
- Diodes >
- Bridge Rectifiers >
- B250C800G-E4/51(VISHAY)
B250C800G-E4/51
文档
产品属性
| Element Configuration | Single |
| Forward Current | 900 mA |
| Forward Voltage | 1 V |
| Height | 5.6 mm |
| Max Forward Surge Current (Ifsm) | 45 A |
| Max Operating Temperature | 125 °C |
| Max Repetitive Reverse Voltage (Vrrm) | 400 V |
| Max Reverse Leakage Current | 10 µA |
| Max Surge Current | 45 A |
| Min Operating Temperature | -40 °C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 4 |
| Peak Non-Repetitive Surge Current | 45 A |
| Peak Reverse Current | 10 µA |
| Radiation Hardening | No |
| Schedule B | 8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080 |
| Width | 8.84 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
库存量: 1,000
MOQ:100
SPQ:100
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 100 - | $0.00 |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |





