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BSS84LT1G
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ON SEMICONDUCTOR |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130mA (Ta) |
| Power Dissipation (Max) | 30 pF @ 5 V |
| Rds On (Max) @ Id, Vgs | 225mW (Ta) |
| Vgs(th) (Max) @ Id | 10Ohm @ 100mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2V @ 250µA |
| Vgs (Max) | ±20V |
| Operating Temperature Range | ±20V |
| Applications | -55°C ~ 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | SOT-23-3 (TO-236) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 2,875
MOQ:1,208
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1,208 - | $0.061 |
| - | - |
| - | - |
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