产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | INFINEON |
| Series | HEXFETR |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Power - Max | 2W |
| Rds On (Max) @ Id, Vgs | 100mOhms @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 14nC @ 10V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | NおよびPチャンネル |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-SO |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 12,000
| 购买数量 | 单价(FOB JAPAN) |
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| 1 - | $0.00 |
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