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- IPB042N10N3GATMA1(INFINEON)
IPB042N10N3GATMA1
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | INFINEON |
| Series | OptiMOS? |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| Power Dissipation (Max) | 214W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhms @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150μA |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 175°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | PG-TO263-3 |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
