DTC114WU3HZGT106
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文档
产品属性
| Category | 分立半导体 Discrete single Pre-Biased |
| Manufacturer | ROHM |
| Transistor Type | NPN - Pre-Bias |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 24 @ 10mA/5V |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 200 mW |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA/10mA |
| Product Overview | NPN/ SOT-323/ R1R2 LEAK |
| Mounting Type | Surface Mount |
| Device Package | UMT3 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 2,956
MOQ:1
SPQ:1
预计进货数量（延期交货）: 0
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 299 | $0.057 |
| 300 - 499 | $0.056 |
| 500 - 999 | $0.047 |
| 1,000 - 3,999 | $0.041 |
| 4,000 - 4,999 | $0.037 |
| 5,000 - 9,999 | $0.036 |
| 10,000 - 29,999 | $0.036 |
| 30,000 - | $0.035 |
