QS8M13TCR
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产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 10V |
| Power - Max | 1.5W |
| Rds On (Max) @ Id, Vgs | 28mOhms @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 5.5nC @ 5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | NおよびPチャンネル |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT8 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 3,000
MOQ:1
SPQ:1
预计进货数量（延期交货）: 0
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 49 | $0.521 |
| 50 - 99 | $0.444 |
| 100 - 299 | $0.382 |
| 300 - 499 | $0.34 |
| 500 - 999 | $0.332 |
| 1,000 - 3,999 | $0.326 |
| 4,000 - 9,999 | $0.321 |
| 10,000 - | $0.32 |
