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核友型号		 Manufacturer Series FET Type Technology Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package FET Feature
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140788

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 600V 10V 20.2A(Tc) 1400 pF @ 100 V 151W(Tc) 190mOhms @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP60R190P6
INFINEON

RoHS
514 22/23+   MOQ : 250
SPQ : 1

预计 11个工作日

核友型号：st76513824

Infineon Technologies CoolMOS™ P6 N-Channel 600V 20.2A 1750 pF@100V 190 mOhms @ 10V 4V Surface Mount -55°C ~ 150°C Industrial Through Hole TO220
質量保證
B-1 		来自供应商的订

IPP60R190P6XKSA1
10  

预计 11个工作日

核友型号：st75140789

Infineon Technologies CoolMOS™ P6 N-Channel MOSFET (Metal Oxide) 600V 10V 20.2A(Tc) 1750 pF @ 100 V 151W(Tc) 190mOhms @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP60R190P6XKSA1
RoHS
4,778 22/23+   MOQ : 250
SPQ : 1

预计 11个工作日

核友型号：st76508588

Infineon Technologies CoolMOS™ P6 N-Channel MOSFET (Metal Oxide) 600V 10V 20.2A(Tc) 1750 pF @ 100 V 151W(Tc) 190mOhms @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP60R199CP
INFINEON

37,111 23+  

预计 16个工作日

核友型号：st76078840

Infineon Technologies
質量保證
B-1 		来自供应商的订

IPP60R199CPXKSA1
77  

预计 11个工作日

核友型号：st75140790

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 650V 10V 16A (Tc) 1520 pF @ 100 V 139W(Tc) 199mOhms @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
10  

预计 11个工作日

核友型号：st75140791

Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET (Metal Oxide) 600V 10V 12A (Tc) 1015 pF @ 400 V 64W(Tc) 210mOhms @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		日本供应商

IPP60R250CP
INFINEON

5 2008  

预计 4个工作日

核友型号：st30342255

Infineon Technologies
質量保證
B-1 		来自供应商的订

IPP60R250CPXKSA1
3  

预计 11个工作日

核友型号：st75140792

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 650V 10V 12A (Tc) 1200 pF @ 100 V 104W (Tc) 250mOhms @ 7.8A, 10V 3.5V @ 440µA 35 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP60R280C6
INFINEON

RoHS
5,000 18+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76540596

Infineon Technologies
質量保證
B-1 		来自供应商的订
2  

预计 11个工作日

核友型号：st75140793

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 600V 10V 13.8A(Tc) 950 pF @ 100 V 104W (Tc) 280mOhms @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP60R280CFD7
INFINEON

10  

预计 11个工作日

核友型号：st75140794

Infineon Technologies CoolMOS™ CFD7 N-Channel 600V 9A 280 mOhms @ 10V 4V Surface Mount -55°C ~ 150°C Industrial Through Hole TO220
質量保證
B-1 		来自供应商的订
96  

预计 11个工作日

核友型号：st75140795

Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET (Metal Oxide) 650V 10V 9A (Tc) 807 pF @ 400 V -55°C ~ 150°C (TJ) 280mOhms @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP60R280P7
INFINEON

18  

预计 11个工作日

核友型号：st75140796

Infineon Technologies CoolMOS™ P7 N-Channel 600V 12A 280 mOhms @ 10V 3.5V 4V -55°C ~ 150°C Industrial Through Hole TO220
質量保證
B-1 		来自供应商的订
30  

预计 11个工作日

核友型号：st75140797

Infineon Technologies CoolMOS™ P7 N-Channel MOSFET (Metal Oxide) 600V 10V 12A (Tc) 761 pF @ 400 V 150°C (TJ) 280mOhms @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
485  

预计 11个工作日

核友型号：st75140798

Infineon Technologies CoolMOS™ CFD7 MOSFET (Metal Oxide) 600V ±20V ±20V Through Hole PG-TO220-3-1
質量保證
B-1 		来自供应商的订
89  

预计 11个工作日

核友型号：st75140799

Infineon Technologies CoolMOS™ P7 N-Channel MOSFET (Metal Oxide) 650V 10V 9A (Tc) 555 pF @ 400 V 41W(Tc) 360mOhms @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订
RoHS
5,847 22/23+   MOQ : 500
SPQ : 1

预计 11个工作日

核友型号：st76493164

Infineon Technologies CoolMOS™ P7 N-Channel MOSFET (Metal Oxide) 650V 10V 9A (Tc) 555 pF @ 400 V 41W(Tc) 360mOhms @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
12  

预计 11个工作日

核友型号：st75140800

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 600V 10V 10.6A(Tc) 700 pF @ 100 V 150°C (TJ) 380mOhms @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
10  

预计 11个工作日

核友型号：st75140801

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 600V 10V 8.1A(Tc) 512 pF @ 100 V 66W (Tc) 520mOhms @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP60R600C6
INFINEON

RoHS
2,500 14+   MOQ : 1,000
SPQ : 1

预计 11个工作日

核友型号：st76411470

Infineon Technologies
質量保證
B-1 		来自供应商的订
20  

预计 11个工作日

核友型号：st75140802

Infineon Technologies CoolMOS™ P7 N-Channel MOSFET (Metal Oxide) 650V 10V 6A (Tc) 363 pF @ 400 V 30W(Tc) 600mOhms @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP65R045C7XKSA1
RoHS
345 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76567948

Infineon Technologies CoolMOS™ C7 N-Channel MOSFET (Metal Oxide) 650V 10V 46A(Tc) 4340 pF @ 400 V 227W(Tc) 45mOhms @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140803

Infineon Technologies CoolMOS™ CFD7A N-Channel MOSFET (Metal Oxide) 650V 10V 45A (Tc) 4975 pF @ 400 V 227W(Tc) 50mOhms @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V -40°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP65R065C7
INFINEON

RoHS
490 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76558014

Infineon Technologies CoolMOS™ C7 N-Channel 650V 33A 65 mOhms @ 10V 3.5V 4V -55°C ~ 150°C Industrial Through Hole TO220
質量保證
B-2 		来自供应商的订
RoHS
775 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76544484

Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET (Metal Oxide) 650V 10V 25A (Tc) 2513 pF @ 400 V 127W(Tc) 90mOhms @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140804

Infineon Technologies CoolMOS™ C7 N-Channel MOSFET (Metal Oxide) 650V 10V 24A (Tc) 2140 pF @ 400 V 128W(Tc) 95mOhms @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
3  

预计 11个工作日

核友型号：st75140805

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 650V 10V 38A (Tc) 2780 pF @ 100 V 278W(Tc) 99mOhms @ 12.8A, 10V 3.5V @ 1.2mA 15 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140806

Infineon Technologies CoolMOS™ CFD7A N-Channel MOSFET (Metal Oxide) 650V 10V 24A (Tc) 2513 pF @ 400 V 127W(Tc) 99mOhms @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V -40°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP65R110CFD
INFINEON

4  

预计 11个工作日

核友型号：st75140807

Infineon Technologies CoolMOS™ CFD2 N-Channel 650V 31.2A 110 mOhms @ 10V 4V Surface Mount -55°C ~ 150°C Industrial Through Hole TO220_x000d_TO220
質量保證
B-1 		来自供应商的订
1  

预计 11个工作日

核友型号：st75140808

Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET (Metal Oxide) 650V 10V 21A (Tc) 1950 pF @ 400 V 114W(Tc) 115mOhms @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V -40°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订
RoHS
335 22/23+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76544928

Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET (Metal Oxide) 650V 10V 21A (Tc) 1950 pF @ 400 V 114W(Tc) 115mOhms @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V -40°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP65R125C7XKSA1
1  

预计 11个工作日

核友型号：st75140809

Infineon Technologies CoolMOS™ C7 N-Channel MOSFET (Metal Oxide) 650V 10V 18A (Tc) 1670 pF @ 400 V 150°C (TJ) 125mOhms @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
海外位置

IPP65R150CFD
INFINEON

3,000 23+  

预计 16个工作日

End of Life 核友型号：st49404116

Infineon Technologies CoolMOS™ CFD2 N-Channel 650V 22.4A 150 mOhms @ 10V 4V Surface Mount -55°C ~ 150°C Industrial Through Hole TO220_x000d_TO220
質量保證
B-2 		来自供应商的订

IPP65R155CFD7
INFINEON

RoHS
6,000 22+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76565037

Infineon Technologies
質量保證
B-1 		来自供应商的订
3  

预计 11个工作日

核友型号：st75140810

Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET (Metal Oxide) 650V 10V 15A (Tc) 1283 pF @ 400 V 77W(Tc) 155mOhms @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140811

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 650V 10V 20.2A(Tc) 1620 pF @ 100 V 151W(Tc) 190mOhms @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP65R190C7FKSA1
62  

预计 11个工作日

核友型号：st75140812

Infineon Technologies CoolMOS™ C7 N-Channel MOSFET (Metal Oxide) 650V 10V 13A (Tc) 1150 pF @ 400 V -55°C ~ 150°C (TJ) 190mOhms @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-2 		来自供应商的订

IPP65R190CFD
INFINEON

RoHS
10,000 22/23+   MOQ : 250
SPQ : 1

预计 11个工作日

核友型号：st76508773

Infineon Technologies CoolMOS™ CFD2 N-Channel 650V 17.5A 190 mOhms @ 10V 4V Surface Mount -55°C ~ 150°C Industrial Through Hole TO220_x000d_TO220
質量保證
B-2 		来自供应商的订

IPP65R190CFD7
INFINEON

RoHS
500 22+   MOQ : 100
SPQ : 1

预计 11个工作日

核友型号：st76556508

Infineon Technologies
質量保證
B-1 		来自供应商的订

IPP65R190CFDXKSA1
5  

预计 11个工作日

核友型号：st75140813

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 650V 10V 17.5A(Tc) 1850 pF @ 100 V 151W(Tc) 190mOhms @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
4  

预计 11个工作日

核友型号：st75140814

Infineon Technologies CoolMOS™ N-Channel MOSFET (Metal Oxide) 650V 10V 20.2A(Tc) 1620 pF @ 100 V 151W(Tc) 190mOhms @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订
5  

预计 11个工作日

核友型号：st75140815

Infineon Technologies CoolMOS™ C7 N-Channel MOSFET (Metal Oxide) 650V 10V 11A (Tc) 996 pF @ 400 V 63W(Tc) 225mOhms @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Through Hole PG-TO220-3
質量保證
B-1 		来自供应商的订

IPP70N04S4-06
INFINEON

3,000 17+  

预计 4个工作日

核友型号：st74840156

Infineon Technologies OptiMOS™-T2 N-Channel 40V 70A 6.5 mOhms 4V 32nC @ 10 V 4V -55°C ~ 175°C Car Mounting Yes TO220 (TO220-3)
質量保證
B-1 		来自供应商的订
3  

预计 11个工作日

核友型号：st75140816

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 55V 10V 77A (Tc) 1770 pF @ 25 V 158W(Tc) 12mOhms @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V -55°C ~ 175°C (TJ) AEC-Q101 Through Hole PG-TO220-3-1
質量保證
B-2 		来自供应商的订

IPP77N06S212AKSA2
INFINEON TECHNOLOGIES

1,091 N/A   MOQ : 500
SPQ : 500

预计 16个工作日

核友型号：st76681628

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 55V 10V 77A (Tc) 1770 pF @ 25 V 158W(Tc) 12mOhms @ 38A, 10V 4V @ 93µA 60 nC @ 10 V ±20V -55°C ~ 175°C (TJ) AEC-Q101 Through Hole PG-TO220-3-1
質量保證
B-1 		来自供应商的订

IPP80N03S4L-03
INFINEON

10  

预计 11个工作日

核友型号：st75140817

Infineon Technologies OptiMOS™-T2 N-Channel 30V 80A 2.7 mOhms 2.2V 140nC @ 10 V 2.2V -55°C ~ 175°C Car Mounting Yes TO220 (TO220-3)
質量保證
B-1 		来自供应商的订
10  

预计 11个工作日

核友型号：st75140818

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 55V 10V 80A (Tc) 3400 pF @ 25 V 250W(Tc) 6.6mOhms @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V -55°C ~ 175°C (TJ) AEC-Q101 Through Hole PG-TO220-3-1
質量保證
B-1 		来自供应商的订
10  

预计 11个工作日

核友型号：st75140819

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 55V 10V 80A (Tc) 2360 pF @ 25 V 190W(Tc) 9.1mOhms @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V -55°C ~ 175°C (TJ) AEC-Q101 Through Hole PG-TO220-3-1
質量保證
B-1 		来自供应商的订
10  

预计 11个工作日

核友型号：st75140820

Infineon Technologies OptiMOS™ N-Channel MOSFET (Metal Oxide) 55V 10V 80A (Tc) 2075 pF @ 25 V 158W(Tc) 10.7mOhms @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V -55°C ~ 175°C (TJ) AEC-Q101 Through Hole PG-TO220-3-1

Recommended Rectifiers - FETs