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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Gate Type	Channel Type	Input Type	Driven Configuration	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Rise / Fall Time (Typ)	Number of Drivers	Product Overview	Operating Temperature Range	Applications	Mounting Type	Device Package
質量保證 B-1	来自供应商的订	IR2102STRPBF INFINEON	22			预计 11个工作日	核友型号：st75140987	Infineon Technologies
質量保證 B-1	来自供应商的订	IR2103STRPBF INFINEON	297			预计 11个工作日	核友型号：st75140988	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Inverting/Non-Inverting	Half Bridge	10V ~ 20V	0.8V/3V	210mA/360mA	100ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2103STRPBF INFINEON	30,000	20+		Approx. 11 days	核友型号：st71361722	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Inverting/Non-Inverting	Half Bridge	10V ~ 20V	0.8V/3V	210mA/360mA	100ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-2	来自供应商的订	IR2103STRPBF INFINEON	1,600	21+	MOQ : 1,600 SPQ : 1	Approx. 11 days	核友型号：st76395606	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Inverting/Non-Inverting	Half Bridge	10V ~ 20V	0.8V/3V	210mA/360mA	100ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-2	来自供应商的订	IR2103STRPBF INFINEON TECHNOLOGIES	5,000	N/A	MOQ : 2,500 SPQ : 2,500	Approx. 16 days	核友型号：st76681641	Infineon Technologies
質量保證 B-2	来自供应商的订	IR2104STRPBF INFINEON	20,000	22/26+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76382077	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/3V	210mA/360mA	100ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2104STRPBF INFINEON	1			Approx. 11 days	核友型号：st75140989	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/3V	210mA/360mA	100ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订海外位置	IR2104STRPBF INFINEON	30,000	26+		Approx. 16 days	核友型号：st49404191	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/3V	210mA/360mA	100ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2106STRPBF INFINEON	5,000	23+		Approx. 11 days	核友型号：st75025568	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2106STRPBF INFINEON	22,821	22+		Approx. 16 days	核友型号：st76078850	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2106STRPBF INFINEON	988			Approx. 11 days	核友型号：st75140990	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2108PBF INFINEON	25			Approx. 11 days	核友型号：st75140991	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2		-40°C ~ 150°C(TJ)	Industrial	Through Hole	8-PDIP
質量保證 B-1	来自供应商的订	IR2108SPBF INFINEON	6			Approx. 11 days	核友型号：st75140992	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2		-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2108STRPBF INFINEON	84			Approx. 11 days	核友型号：st75140993	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2108STRPBF INFINEON	10,000	20+		Approx. 11 days	核友型号：st71361723	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR21091SPBF INFINEON	10			Approx. 11 days	核友型号：st75140994
質量保證 B-1	来自供应商的订	IR21094PBF INFINEON	104			Approx. 11 days	核友型号：st75140995	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2		-40°C ~ 150°C(TJ)	Industrial	Through Hole	14-DIP
質量保證 B-1	来自供应商的订	IR21094SPBF INFINEON	1			Approx. 11 days	核友型号：st75140996	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2		-40°C ~ 150°C(TJ)	Industrial	Surface Mount	14-SOIC
質量保證 B-2	来自供应商的订	IR21094STRPBF INFINEON	10,404	22/24+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76441971	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 14SOIC	-40°C ~ 150°C(TJ)		Surface Mount	14-SOIC
質量保證 B-1	来自供应商的订	IR21094STRPBF INFINEON	25			Approx. 11 days	核友型号：st75140997	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 14SOIC	-40°C ~ 150°C(TJ)		Surface Mount	14-SOIC
質量保證 B-1	来自供应商的订	IR2109PBF INFINEON	1			Approx. 11 days	核友型号：st75140998	Infineon Technologies	IGBT MOSFET			Half Bridge	10 ~ 20 V		0.2 A/0.35A					Industrial	Through Hole
質量保證 B-1	来自供应商的订	IR2109S INFINEON	10			Approx. 11 days	核友型号：st75140999	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2		-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2109SPBF INFINEON	10			Approx. 11 days	核友型号：st75141000	Infineon Technologies	IGBT MOSFET			Half Bridge	10 ~ 20 V		0.2 A/0.35A					Industrial	Surface Mount
質量保證 B-1	来自供应商的订	IR2109STRPBF INFINEON	10			Approx. 11 days	核友型号：st75141001	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2109STRPBF INFINEON	4,120	23+		Approx. 16 days	核友型号：st76078851	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-2	来自供应商的订	IR2109STRPBF INFINEON	5,016	22/24+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76461850	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	0.8V/2.9V	200mA/350mA	150ns/50ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)		Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2110PBF INFINEON	737			Approx. 8 days	核友型号：st73307648	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		2.5 A/2.5A					Industrial	Through Hole
質量保證 B-1	来自供应商的订海外位置	IR2110PBF INFINEON	6,001	22+		Approx. 16 days	核友型号：st49404192	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		2.5 A/2.5A					Industrial	Through Hole
質量保證 B-2	来自供应商的订	IR2110STRPBF INFINEON TECHNOLOGIES	2,000	N/A	MOQ : 1,000 SPQ : 1,000	Approx. 16 days	核友型号：st76681642	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		2.5 A/2.5A					Industrial	Surface Mount
質量保證 B-2	来自供应商的订	IR2110STRPBF INFINEON	3,942	22/23+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76420244	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	3.3V ~ 20V	6V/9.5V	2A/2A	25ns/17ns	2	IC GATE DRVR HALF-BRIDGE 16SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	16-SOIC
質量保證 B-1	来自供应商的订	IR2110STRPBF INFINEON	1,372			Approx. 11 days	核友型号：st75141002	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	3.3V ~ 20V	6V/9.5V	2A/2A	25ns/17ns	2	IC GATE DRVR HALF-BRIDGE 16SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	16-SOIC
質量保證 B-1	来自供应商的订海外位置	IR2110STRPBF INFINEON	18,000	25+		Approx. 16 days	核友型号：st49404193	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	3.3V ~ 20V	6V/9.5V	2A/2A	25ns/17ns	2	IC GATE DRVR HALF-BRIDGE 16SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	16-SOIC
質量保證 B-1	来自供应商的订	IR2110STRPBF INFINEON	5,000	20+		Approx. 11 days	核友型号：st71361724	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	Half Bridge	3.3V ~ 20V	6V/9.5V	2A/2A	25ns/17ns	2	IC GATE DRVR HALF-BRIDGE 16SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	16-SOIC
質量保證 B-2	来自供应商的订	IR2111PBF INFINEON	5,000	22/25+	MOQ : 500 SPQ : 1	Approx. 11 days	核友型号：st76440389	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	8.3V/12.6V	250mA/500mA	80ns/40ns	2		-40°C ~ 150°C(TJ)	Industrial	Through Hole	8-PDIP
質量保證 B-1	来自供应商的订	IR2111PBF INFINEON	133			Approx. 11 days	核友型号：st75141003	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	8.3V/12.6V	250mA/500mA	80ns/40ns	2		-40°C ~ 150°C(TJ)	Industrial	Through Hole	8-PDIP
質量保證 B-1	来自供应商的订	IR2111SPBF INFINEON	15			Approx. 11 days	核友型号：st75141004	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	8.3V/12.6V	250mA/500mA	80ns/40ns	2		-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-2	来自供应商的订	IR2111STRPBF INFINEON	5,376	22+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76451607	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	8.3V/12.6V	250mA/500mA	80ns/40ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2111STRPBF INFINEON	1,201	22+		Approx. 16 days	核友型号：st76078852	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	8.3V/12.6V	250mA/500mA	80ns/40ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2111STRPBF INFINEON	10			Approx. 11 days	核友型号：st75141005	Infineon Technologies	IGBT/N-Channel MOSFET	Synchronous	Non-Inverting	Half Bridge	10V ~ 20V	8.3V/12.6V	250mA/500mA	80ns/40ns	2	IC GATE DRVR HALF-BRIDGE 8SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2112SPBF INFINEON	100			Approx. 11 days	核友型号：st75141006	Infineon Technologies	IGBT/N-Channel MOSFET	Independent	Non-Inverting	High Side or Low Side	10V ~ 20V	6V/9.5V	250mA/500mA	80ns/40ns	2		-40°C ~ 150°C(TJ)	Industrial	Surface Mount	16-SOIC
質量保證 B-1	来自供应商的订	IR2112STRPBF INFINEON	3			Approx. 11 days	核友型号：st75141007	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		0.25 A/0.5A					Industrial	Surface Mount
質量保證 B-1	来自供应商的订	IR2113STRPBF INFINEON	5			Approx. 11 days	核友型号：st75141008	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		2.5 A/2.5A					Industrial	Surface Mount
質量保證 B-1	来自供应商的订	IR2113STRPBF INFINEON	5,050			Approx. 8 days	核友型号：st73307649	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		2.5 A/2.5A					Industrial	Surface Mount
質量保證 B-2	来自供应商的订	IR2113STRPBF INFINEON	20,163	22/24+	MOQ : 1,000 SPQ : 1	Approx. 11 days	核友型号：st76389959	Infineon Technologies	IGBT MOSFET			High-SideAnd low-Side	10 ~ 20 V		2.5 A/2.5A					Industrial	Surface Mount
質量保證 B-1	来自供应商的订	IR2117SPBF INFINEON	2			Approx. 11 days	核友型号：st75141009	Infineon Technologies	IGBT/N-Channel MOSFET	Single	Non-Inverting	High Side	10V ~ 20V	6V/9.5V	250mA/500mA	80ns/40ns	1		-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2118PBF INFINEON	10			Approx. 11 days	核友型号：st75141010	Infineon Technologies	IGBT/N-Channel MOSFET	Single	Inverting	High Side	10V ~ 20V	6V/9.5V	250mA/500mA	80ns/40ns	1		-40°C ~ 150°C(TJ)	Industrial	Through Hole	8-PDIP
質量保證 B-1	来自供应商的订	IR2118STRPBF INFINEON	21,747	21+22+		Approx. 16 days	核友型号：st76078853	Infineon Technologies	IGBT/N-Channel MOSFET	Single	Inverting	High Side	10V ~ 20V	6V/9.5V	250mA/500mA	80ns/40ns	1	IC GATE DRVR HIGH-SIDE 8SOIC	-40°C ~ 150°C(TJ)	Industrial	Surface Mount	8-SOIC
質量保證 B-1	来自供应商的订	IR2121PBF INFINEON	5,000	24+		Approx. 16 days	核友型号：st76078854
質量保證 B-2	来自供应商的订	IR2121PBF INFINEON	5,000	22/24+	MOQ : 500 SPQ : 1	Approx. 11 days	核友型号：st76453059
質量保證 B-1	来自供应商的订	IR2121PBF INFINEON	10			Approx. 11 days	核友型号：st75141011