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库存类别供应商排名	库存所在位置	型号 / 制造商 / 其他	库存量	生产批次	最低订货数量 / 后续订购数量	预定出货日	资讯核友型号	Manufacturer	Series	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Automotive	Mounting Type	Device Package
質量保證 B-2	来自供应商的订	IAUZ20N08S5L300ATMA1 INFINEON	6,515	22/23+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76475891	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	80V	4.5V, 10V	20A (Tc)	599 pF @ 40 V	30W(Tc)	30mOhms @ 10A, 10V	2V @ 8µA	10.5 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TSDSON-8-32
質量保證 B-2	来自供应商的订	IAUZ30N06S5L140ATMA1 INFINEON	9,669	22/23+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76460774	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	60V		30A (Tj)	888 pF @ 30 V	33W (Tc)	14mOhm @ 15A, 10V	2.2V @ 10µA	12.2 nC @ 10 V	±16V	-55°C ~ 175°C (TJ)		AEC-Q101	Surface Mount	PG-TSDSON-8-32
質量保證 B-2	来自供应商的订	IAUZ30N10S5L240ATMA1 INFINEON	19,526	22/23+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76480511	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	100V	4.5V, 10V	30A (Tc)	832 pF @ 50 V	45.5W(Tc)	24mOhms @ 15A, 10V	2.2V @ 15µA	14 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TSDSON-8-32
質量保證 B-2	来自供应商的订	IAUZ40N06S5L050ATMA1 INFINEON	13,003	22/23+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76493625	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	60V	4.5V, 10V	90A(Tj)	2500 pF @ 30 V	71W (Tc)	5mOhms @ 20A, 10V	2.2V @ 29µA	36.7 nC @ 10 V	±16V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TSDSON-8-33
質量保證 B-2	来自供应商的订	IAUZ40N06S5N050ATMA1 INFINEON	15,785	22/23+	MOQ : 1,000 SPQ : 1	预计 11个工作日	核友型号：st76429219	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	60V		40A(Tj)	2200 pF @ 30 V	71W (Tc)	5mOhms @ 20A, 10V	3.4V @ 29µA	30.5 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)		AEC-Q101	Surface Mount	PG-TSDSON-8-33
質量保證 B-2	来自供应商的订	IAUZ40N10S5N130ATMA1 INFINEON	9,341	22/23+	MOQ : 500 SPQ : 1	预计 11个工作日	核友型号：st76495167	Infineon Technologies	OptiMOS™ 5	N-Channel	MOSFET (Metal Oxide)	100V	6V, 10V	40A (Tc)	1525 pF @ 50 V	68W (Tc)	13mOhms @ 20A, 10V	3.8V @ 27µA	24 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TSDSON-8-33
質量保證 B-1	来自供应商的订	IGLD60R190D1AUMA1 INFINEON	16			预计 11个工作日	核友型号：st75139784	Infineon Technologies	CoolGaN™	N-Channel	Ganfet (Gallium Nitride)	600V		10A (Tc)	157 pF @ 400 V	62.5W(Tc)		1.6V @ 960µA	-10V	-10V	-55°C ~ 150°C (TJ)			Surface Mount	PG-LSON-8-1
質量保證 B-1	来自供应商的订	IGO60R070D1 INFINEON	1			预计 11个工作日	核友型号：st75139785	Infineon Technologies
質量保證 B-1	来自供应商的订	IGT65R035D2 INFINEON	200	24+		预计 11个工作日	核友型号：st75028509	Infineon Technologies						49A								Industrial		Surface Mount	TOLL
質量保證 B-1	来自供应商的订	IMBF170R450M1 INFINEON	1,000	21+22+		预计 16个工作日	核友型号：st76078793	Infineon Technologies	CoolSiC™ G1					9.8A							-55°C ~ 175°C	Industrial
質量保證 B-1	来自供应商的订	IMBF170R450M1 INFINEON	420	23+		预计 11个工作日	核友型号：st75028631	Infineon Technologies	CoolSiC™ G1					9.8A							-55°C ~ 175°C	Industrial
質量保證 B-1	来自供应商的订	IMBG65R030M1HXTMA1 INFINEON	1			预计 11个工作日	核友型号：st75140089	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	63A(Tc)	1643 pF @ 400 V	234W(Tc)	42mOhms @ 29.5A, 18V	5.7V @ 8.8mA	49 nC @ 18 V	+23V, -5V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TO263-7-12
質量保證 B-1	来自供应商的订	IMBG65R048M1HXTMA1 INFINEON	2			预计 11个工作日	核友型号：st75140090	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	45A (Tc)	1118 pF @ 400 V	183W (Tc)	64mOhms @ 20.1A, 18V	5.7V @ 6mA	33 nC @ 18 V	+23V, -5V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TO263-7-12
質量保證 B-1	来自供应商的订	IMBG65R057M1HXTMA1 INFINEON	1			预计 11个工作日	核友型号：st75140091	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	39A (Tc)	930 pF @ 400 V	150°C (TJ)	74mOhms @ 16.7A, 18V	5.7V @ 5mA	28 nC @ 18 V	+23V, -5V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TO263-7-12
質量保證 B-1	来自供应商的订	IMBG65R072M1HXTMA1 INFINEON	2			预计 11个工作日	核友型号：st75140092	Infineon Technologies	CoolSIC™ M1	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	33A (Tc)	744 pF @ 400 V	140W (Tc)	94mOhms @ 13.3A, 18V	5.7V @ 4mA	22 nC @ 18 V	+23V, -5V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TO263-7-12
質量保證 B-1	来自供应商的订	IMBG65R083M1HXTMA1 INFINEON	2			预计 11个工作日	核友型号：st75140093	Infineon Technologies	CoolSIC™ M1	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	28A (Tc)	624 pF @ 400 V	126W(Tc)	111mOhms @ 11.2A, 18V	5.7V @ 3.3mA	19 nC @ 18 V	+23V, -5V	-55°C ~ 175°C (TJ)			Surface Mount	PG-TO263-7-12
質量保證 B-2	来自供应商的订	IMT65R022M1HXUMA1 INFINEON	585	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76588356	Infineon Technologies	CoolSiC™		SiCFET (Silicon Carbide)	650V	Through Hole											Surface Mount	PG-HSOF-8-2
質量保證 B-2	来自供应商的订	IMT65R039M1HXUMA1 INFINEON	767	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76570947	Infineon Technologies	CoolSiC™		SiCFET (Silicon Carbide)	650V	Through Hole											Surface Mount	PG-HSOF-8-2
質量保證 B-2	来自供应商的订	IMT65R048M1HXUMA1 INFINEON	391	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76567149	Infineon Technologies	CoolSiC™		SiCFET (Silicon Carbide)	650V	Through Hole											Surface Mount	PG-HSOF-8-2
質量保證 B-1	来自供应商的订	IMT65R057M1H INFINEON	100	23+		预计 11个工作日	核友型号：st75028506	Infineon Technologies	CoolSiC™ G1													Industrial
質量保證 B-2	来自供应商的订	IMT65R057M1HXUMA1 INFINEON	607	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76562737	Infineon Technologies	CoolSiC™		SiCFET (Silicon Carbide)	650V	Through Hole											Surface Mount	PG-HSOF-8-2
質量保證 B-2	来自供应商的订	IMT65R072M1HXUMA1 INFINEON	2,172	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76559314	Infineon Technologies	CoolSiC™		SiCFET (Silicon Carbide)	650V	Through Hole											Surface Mount	PG-HSOF-8-2
質量保證 B-2	来自供应商的订	IMT65R083M1HXUMA1 INFINEON	1,934	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76554444	Infineon Technologies	CoolSiC™		SiCFET (Silicon Carbide)	650V	Through Hole											Surface Mount	PG-HSOF-8-2
質量保證 B-1	来自供应商的订	IMW120R014M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140125	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	1200V	15V, 18V	127A(Tc)	4580 pF @ 800 V	455W(Tc)	18.4mOhms @ 54.3A, 18V	5.2V @ 23.4mA	145 nC @ 18 V	+20V, -5V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-3
質量保證 B-1	来自供应商的订	IMW120R045M1 INFINEON	240	23+		预计 11个工作日	核友型号：st75028848	Infineon Technologies	CoolSiC™ G1													Industrial
質量保證 B-2	来自供应商的订	IMW120R060M1H INFINEON	30	20+	MOQ : 30 SPQ : 1	预计 11个工作日	核友型号：st76559421	Infineon Technologies	CoolSiC™ G1													Industrial
質量保證 B-1	来自供应商的订	IMW120R220M1HXKSA1 INFINEON	5			预计 11个工作日	核友型号：st75140126	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	1200V	15V, 18V	13A (Tc)	289 pF @ 800 V	75W (Tc)	286mOhms @ 4A, 18V	5.7V @ 1.6mA	8.5 nC @ 18 V	+23V, -7V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-2	来自供应商的订	IMW65R007M2HXKSA1 INFINEON	1,435	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76609001	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	15V, 20V	171A(Tc)	6359 pF @ 400 V	625W(Tc)	6.1mOhms @ 146.3A, 20V	5.6V @ 29.7mA	179 nC @ 18 V	+23V, -7V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-3-U06
質量保證 B-1	来自供应商的订	IMW65R027M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140127	Infineon Technologies	CoolSIC™ M1	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	47A (Tc)	2131 pF @ 400 V	150°C (TJ)	34mOhms @ 38.3A, 18V	5.7V @ 11mA	62 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-1	来自供应商的订	IMW65R039M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140128	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	46A(Tc)	1393 pF @ 400 V	176W(Tc)	50mOhms @ 25A, 18V	5.7V @ 7.5mA	41 nC @ 18 V	+20V, -2V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-1	来自供应商的订	IMW65R048M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140129	Infineon Technologies	CoolSIC™ M1	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	39A (Tc)	1118 pF @ 400 V	125W (Tc)	64mOhms @ 20.1A, 18V	5.7V @ 6mA	33 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-1	来自供应商的订	IMW65R057M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140130	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	35A (Tc)	930 pF @ 400 V	133W(Tc)	74mOhms @ 16.7A, 18V	5.7V @ 5mA	28 nC @ 18 V	+20V, -2V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-1	来自供应商的订	IMW65R072M1HXKSA1 INFINEON	10			预计 11个工作日	核友型号：st75140131	Infineon Technologies	CoolSIC™ M1	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	26A (Tc)	744 pF @ 400 V	150°C (TJ)	94mOhms @ 13.3A, 18V	5.7V @ 4mA	22 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-1	来自供应商的订	IMW65R107M1HXKSA1 INFINEON	38			预计 11个工作日	核友型号：st75140132	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	20A (Tc)	496 pF @ 400 V	75W (Tc)	142mOhms @ 8.9A, 18V	5.7V @ 3mA	15 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-2	来自供应商的订	IMZ120R030M1H INFINEON	2,880	22/23+	MOQ : 240 SPQ : 1	预计 11个工作日	核友型号：st76583617	Infineon Technologies	CoolSiC™ G1													Industrial
質量保證 B-2	来自供应商的订	IMZ120R090M1H INFINEON	20,308	21+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76559422	Infineon Technologies	CoolSiC™ G1													Industrial
質量保證 B-1	来自供应商的订	IMZ120R090M1HXKSA1 INFINEON	2			预计 11个工作日	核友型号：st75140139	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	1200V	15V, 18V	26A (Tc)	707 pF @ 800 V	115W(Tc)	117mOhms @ 8.5A, 18V	5.7V @ 3.7mA	21 nC @ 18 V	+23V, -7V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-1
質量保證 B-1	来自供应商的订	IMZ120R140M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140140	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	1200V	15V, 18V	19A (Tc)	454 pF @ 800 V	150°C (TJ)	182mOhms @ 6A, 18V	5.7V @ 2.5mA	13 nC @ 18 V	+23V, -7V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-1
質量保證 B-1	来自供应商的订	IMZ120R350M1HXKSA1 INFINEON	2			预计 11个工作日	核友型号：st75140141	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	1200V	15V, 18V	4.7A (Tc)	182 pF @ 800 V	150°C (TJ)	350mOhms @ 2A, 18V	5.7V @ 1mA	5.3 nC @ 18 V	+23V, -7V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-1
質量保證 B-1	来自供应商的订	IMZA120R007M1HXKSA1 INFINEON	3			预计 11个工作日	核友型号：st75140144	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	1200V	15V, 18V	225A(Tc)	9170 pF @ 800 V	750W(Tc)	9.9mOhms @ 108A, 18V	5.2V @ 47mA	289 nC @ 18 V	+20V, -5V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-8
質量保證 B-1	来自供应商的订	IMZA120R030M1H INFINEON	1			预计 11个工作日	核友型号：st75140145	Infineon Technologies	CoolSiC™ G1													Industrial
質量保證 B-1	来自供应商的订	IMZA65R027M1HXKSA1 INFINEON	2			预计 11个工作日	核友型号：st75140146	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	59A(Tc)	2131 pF @ 400 V	150°C (TJ)	34mOhms @ 38.3A, 18V	5.7V @ 11mA	63 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-4-3
質量保證 B-1	来自供应商的订	IMZA65R030M1HXKSA1 INFINEON	5			预计 11个工作日	核友型号：st75140147	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	53A(Tc)	1643 pF @ 400 V	197W(Tc)	42mOhms @ 29.5A, 18V	5.7V @ 8.8mA	48 nC @ 18 V	+20V, -2V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-3
質量保證 B-1	来自供应商的订	IMZA65R048M1HXKSA1 INFINEON	30			预计 11个工作日	核友型号：st75140148	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	39A (Tc)	1118 pF @ 400 V	125W (Tc)	64mOhms @ 20.1A, 18V	5.7V @ 6mA	33 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-4-3
質量保證 B-1	来自供应商的订	IMZA65R057M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140149	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	35A (Tc)	930 pF @ 400 V	133W(Tc)	74mOhms @ 16.7A, 18V	5.7V @ 5mA	28 nC @ 18 V	+20V, -2V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-3
質量保證 B-1	来自供应商的订	IMZA65R083M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140150	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	26A (Tc)	624 pF @ 400 V	104W (Tc)	111mOhms @ 11.2A, 18V	5.7V @ 3.3mA	19 nC @ 18 V	+20V, -2V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-3
質量保證 B-1	来自供应商的订	IMZA65R107M1HXKSA1 INFINEON	1			预计 11个工作日	核友型号：st75140151	Infineon Technologies	CoolSIC™ M1	N-Channel	SiCFET (Silicon Carbide)	650V	Through Hole	20A (Tc)	496 pF @ 400 V	75W (Tc)	142mOhms @ 8.9A, 18V	5.7V @ 3mA	15 nC @ 18 V	+23V, -5V	-55°C ~ 150°C (TJ)			Through Hole	PG-TO247-3-41
質量保證 B-2	来自供应商的订	IMZA75R008M1HXKSA1 INFINEON	328	22/23+	MOQ : 100 SPQ : 1	预计 11个工作日	核友型号：st76612902	Infineon Technologies	CoolSiC™	N-Channel	SiCFET (Silicon Carbide)	750V	15V, 20V	163A(Tc)	6137 pF @ 500 V	517W(Tc)	7.2mOhms @ 90.3A, 20V	5.6V @ 32.4mA	178 nC @ 500 V	+23V, -5V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO247-4-U02
質量保證 B-1	来自供应商的订	IPA028N04NM3SXKSA1 INFINEON	15			预计 11个工作日	核友型号：st75140236	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	40V	10V	89A(Tc)	9500 pF @ 20 V	38W (Tc)	2.8mOhms @ 89A, 10V	4V @ 95µA	120 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO220-FP
質量保證 B-1	来自供应商的订	IPA028N08N3GXKSA1 INFINEON	2			预计 11个工作日	核友型号：st75140237	Infineon Technologies	OptiMOS™	N-Channel	MOSFET (Metal Oxide)	80V	6V, 10V	89A(Tc)	14200 pF @ 40 V	42W (Tc)	2.8mOhms @ 89A, 10V	3.5V @ 270µA	206 nC @ 10 V	±20V	-55°C ~ 175°C (TJ)			Through Hole	PG-TO220-FP

核友型号：st76475891

核友型号：st76460774

核友型号：st76480511

核友型号：st76493625

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