IPD30N08S2L21ATMA1

INFINEON

RoHS狀況:RoHS

庫存類別:質量保證

供應商排名:B-2

Management ID:st76510829

Date Code:22/23+

IPD30N08S2L21ATMA1_製品イメージ01

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文件

規格書


商品說明

CategoryDiscrete semiconductors
ManufacturerINFINEON
SeriesOptiMOS™
FET TypeN-Channel
Drain to Source Voltage (Vdss)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)75V
Current - Continuous Drain (Id) @ 25°C4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds30A (Tc)
Power Dissipation (Max)1650 pF @ 25 V
Rds On (Max) @ Id, Vgs136W(Tc)
Vgs(th) (Max) @ Id20.5mOhms @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs2V @ 80µA
Vgs (Max)72 nC @ 10 V
Operating Temperature Range±20V
Applications-55°C ~ 175°C (TJ)
Device PackageSurface Mount
TechnologyPG-TO252-3-11

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

庫存量: 36,898

MOQ:250

SPQ:1


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