US6J11TR

ROHM

RoHS狀況:PBF

庫存類別:質量保證

供應商排名:B-2

Management ID:st76426059

Date Code:22/23+

US6J11TR_製品イメージ01

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文档

規格書


商品說明

CategoryDiscrete semiconductors
ManufacturerROHM
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C1.3 A
Input Capacitance (Ciss) (Max) @ Vds290pF @ 6V
Power - Max320mW
Rds On (Max) @ Id, Vgs260mOhms @ 1.3A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate charge (Qg) when Vgs is applied (max)2.4nC @ 4.5V
TechnologyMOSFET (Metal Oxide)
Configuration2Pチャンネル(デュアル)
FET FeatureLogic Level Gate
Operating Temperature Range150°C(TJ)
Mounting TypeSurface Mount
Device PackageTUMT6

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

庫存量: 1,150

MOQ:1,000

SPQ:1


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