VT6M1T2CR
當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
如欲了解詳情、請點擊上面「查詢詳情」與我們聯絡。
文件
商品說明
| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Power - Max | 120mW |
| Rds On (Max) @ Id, Vgs | 3.5Ohms @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100μA |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Operating Temperature Range | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | VMT6 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
