RQ5H020SPTL
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 45V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
| Power Dissipation (Max) | 540mW(Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhms @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT3 |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
