NTJD4401NT1G
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文件
商品說明
| Category | Discrete semiconductors Arrays |
| Manufacturer | ON SEMICONDUCTOR |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 630mA |
| Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 20V |
| Power - Max | 270mW |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 630mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Gate charge (Qg) when Vgs is applied (max) | 3nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Operating Temperature Range | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | SC-88/SC70-6/SOT-363 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
