MUN5312DW1T1G
ON SEMICONDUCTOR
庫存類別:質量保證
供應商排名:B-1
Management ID:st75152177
當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
如欲了解詳情、請點擊上面「查詢詳情」與我們聯絡。
文件
商品說明
| Case/Package | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50 V |
| Collector Emitter Saturation Voltage | 250 mV |
| Collector Emitter Voltage (VCEO) | 50 V |
| Contact Plating | Tin |
| Continuous Collector Current | 100 mA |
| Current Rating | 100 mA |
| Element Configuration | Dual |
| Height | 900 µm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Lifecycle Status | Production (Last Updated: 4 years ago) |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 4 years ago) |
| Max Breakdown Voltage | 50 V |
| Max Collector Current | 100 mA |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 187 mW |
| Min Operating Temperature | -55 °C |
| Number of Channels | 2 |
| Number of Pins | 6 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| REACH SVHC | No |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Voltage Rating (DC) | 50 V |
| Width | 1.25 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
