IRLR3114ZTRPBF
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFET® |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 42A (Tc) |
| Power Dissipation (Max) | 3810 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4.9mOhm @ 42A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 100µA |
| Vgs (Max) | 56 nC @ 4.5 V |
| Operating Temperature Range | ±16V |
| Applications | -55°C ~ 175°C (TJ) |
| Device Package | Surface Mount |
| Technology | TO-252AA (DPAK) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
