IPW60R160P6FKSA1
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | CoolMOS? P6 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 23.8A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 100 V |
| Power Dissipation (Max) | 176W(Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhms @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 750μA |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | PG-TO247-3 |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
