BSP129H6327XTSA1
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | SIPMOSR |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 240V |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 350mA(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 108 pF @ 25 V |
| Power Dissipation (Max) | 1.8W(Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohms @ 350mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 108μA |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 5 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | PG-SOT223-4 |
| Technology | Mosfet (Metal Oxide) |
| FET Feature | Depletion Mode |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
