RS6P100BHTB1
文档
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 100A (Tc) |
| Power Dissipation (Max) | 2880 pF @ 50 V |
| Rds On (Max) @ Id, Vgs | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5.9mOhm @ 90A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 1mA |
| Vgs (Max) | 45 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | 8-HSOP |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 2,280
MOQ:10
SPQ:10
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - 99 | $1.608 |
| 100 - 499 | $1.502 |
| 500 - 999 | $1.396 |
| 1,000 - 2,499 | $1.282 |
| 2,500 - 4,999 | $1.07 |
| 5,000 - 12,499 | $0.994 |
| 12,500 - | $0.857 |
| - | - |




.png)