RF4G100BGTCR
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 20 V |
| Power Dissipation (Max) | 2W(Ta) |
| Rds On (Max) @ Id, Vgs | 14.2mOhms @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | DFN2020-8S |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 3,000
MOQ:10
SPQ:10
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - 99 | $0.324 |
| 100 - 499 | $0.302 |
| 500 - 999 | $0.279 |
| 1,000 - 2,999 | $0.264 |
| 3,000 - 5,999 | $0.219 |
| 6,000 - 14,999 | $0.204 |
| 15,000 - | $0.173 |
| - | - |
