R6086YNZ4C13
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 600V |
| Current - Continuous Drain (Id) @ 25°C | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 86A (Tc) |
| Power Dissipation (Max) | 5100 pF @ 100 V |
| Rds On (Max) @ Id, Vgs | 150°C (TJ) |
| Vgs(th) (Max) @ Id | 44mOhms @ 17A, 12V |
| Gate Charge (Qg) (Max) @ Vgs | 6V @ 4.6mA |
| Vgs (Max) | 110 nC @ 10 V |
| Operating Temperature Range | ±30V |
| Applications | 150°C (TJ) |
| Device Package | Through Hole |
| Technology | 48 nC @ 18 V |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 500
MOQ:1
SPQ:1
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 1 - 49 | $7.89 |
| 50 - 99 | $7.367 |
| 100 - 499 | $6.843 |
| 500 - 599 | $6.312 |
| 600 - 1,199 | $5.265 |
| 1,200 - 2,999 | $4.871 |
| 3,000 - | $4.211 |
| - | - |
