QS8M51HZGTR
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| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2A(TA), 1.5A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V, 950pF @ 25V |
| Power - Max | 1.1W(Ta) |
| Rds On (Max) @ Id, Vgs | 325mOhms @ 2A, 10V, 470mOhms @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 4.7nC @ 5V, 17nC @ 5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | NおよびPチャンネル |
| Operating Temperature Range | -55°C ~ 150°C |
| Mounting Type | Surface Mount |
| Device Package | TSMT8 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 1,300
MOQ:10
SPQ:10
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - 99 | $0.903 |
| 100 - 499 | $0.842 |
| 500 - 999 | $0.788 |
| 1,000 - 2,999 | $0.726 |
| 3,000 - 5,999 | $0.602 |
| 6,000 - 14,999 | $0.556 |
| 15,000 - | $0.479 |
| - | - |
