HT8KE6TB1
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| Category | Discrete semiconductors Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A(TA), 13A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF / 50V |
| Power - Max | 2W(Ta), 14W(Tc) |
| Rds On (Max) @ Id, Vgs | 57mOhms @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 6.7nC @ 10V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 Nチャネル |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-HSMT(3.2x3) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 3,000
MOQ:10
SPQ:10
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - 49 | $1.043 |
| 50 - 99 | $0.91 |
| 100 - 499 | $0.799 |
| 500 - 999 | $0.718 |
| 1,000 - 2,999 | $0.651 |
| 3,000 - 5,999 | $0.54 |
| 6,000 - 14,999 | $0.503 |
| 15,000 - | $0.437 |
