G12P10TE

Goford Semiconductor

RoHS狀況:N/A

庫存類別:質量保證

供應商排名:A-4

Management ID:st74347898

Date Code:N/A

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商品說明

CategoryDiscrete semiconductors
ManufacturerGoford Semiconductor
SeriesTrenchFETR
FET TypeP-Channel
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A(Tc)
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 25 V
Power Dissipation (Max)40W(Tc)
Rds On (Max) @ Id, Vgs200mOhms @ 6A, 10V
Vgs(th) (Max) @ Id3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Operating Temperature Range-55°C ~ 150°C(TJ)
Mounting TypeThrough Hole
Device PackageTO-220
TechnologyMosfet (Metal Oxide)
FET FeatureStandard

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

庫存量: 50

MOQ:1

SPQ:1

數量

定價(美元) 總金額
購買數量單價(FOB JAPAN)
1 - 9 $2.12
10 - 49 $1.631
50 - 99 $1.134
100 - 299 $1.072
300 - 499 $1.03
500 - 999 $1.022
1,000 - 1,999 $1.016
2,000 - $1.013