RAQ045P01TCR
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.5V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4.5A (Ta) |
| Power Dissipation (Max) | 4200 pF @ 6 V |
| Rds On (Max) @ Id, Vgs | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1V @ 1mA |
| Vgs (Max) | 40 nC @ 4.5 V |
| Operating Temperature Range | TSMT3 |
| Applications | 150°C (TJ) |
| Device Package | Surface Mount |
| Technology | SOT-23-6 Thin, TSOT-23-6 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
