IRFB4321PBF
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFETR |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 85A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 50 V |
| Power Dissipation (Max) | 350W(Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhms @ 33A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±30V |
| Operating Temperature Range | -55°C ~ 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-220AB |
| Technology | Mosfet (Metal Oxide) |
| FET Feature | Standard |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 500
MOQ:69
SPQ:1
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 69 - 689 | $2.533 |
| 690 - 3,449 | $2.507 |
| 3,450 - 6,899 | $2.478 |
| 6,900 - 34,499 | $2.469 |
| 34,500 - 68,999 | $2.461 |
| 69,000 - 137,999 | $2.458 |
| 138,000 - | $2.451 |
| - | - |
