SCT2H12NZGC11
ROHM
RoHS狀況:RoHS
庫存類別:質量保證
供應商排名:A-3
Management ID:st68258855
Date Code:21
當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
如欲了解詳情、請點擊上面「查詢詳情」與我們聯絡。
文档
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1700V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
| Power Dissipation (Max) | 35W(Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohms @ 1.1A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 900μA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-3PFM |
| Technology | Sicfet (Silicon Carbide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
