2SB1259
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | SANKEN |
| Transistor Type | PNP Darlington |
| Voltage - Collector Emitter Breakdown (Maximum) | 120V |
| Current - Collector Interrupt (max) | 10 μA(ICBO) |
| Current - Collector (Ic) (Max) | 10A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 5A, 4V |
| Frequency-transition | 100MHz |
| Power - Maximum | 30 W |
| Vce saturation (max) @lb, Ic | 1.5V @ 10mA, 5A |
| Mounting Type | Through Hole |
| Device Package | TO-220F |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
