TK6Q65W,S1Q
當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
如欲了解詳情、請點擊上面「查詢詳情」與我們聯絡。
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | TOSHIBA |
| Series | DTMOSIV |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5.8A (Ta) |
| Power Dissipation (Max) | 390 pF @ 300 V |
| Rds On (Max) @ Id, Vgs | 150°C (TJ) |
| Vgs(th) (Max) @ Id | 1.05Ohms @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5V @ 180µA |
| Operating Temperature Range | ±30V |
| Applications | 150°C (TJ) |
| Device Package | Through Hole |
| Technology | IPAK |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 10
MOQ:10
SPQ:1
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 10 - | $7.354 |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
