SCT3030ALGC11
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商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 70A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1526 pF @ 500 V |
| Power Dissipation (Max) | 262W(Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhms @ 27A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 13.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Operating Temperature Range | 175°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-247N |
| Technology | Sicfet (Silicon Carbide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 9
MOQ:3
SPQ:1
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 3 - | $30.113 |
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