IRF7341TRPBF

INFINEON

庫存類別:質量保證

供應商排名:B-1

Management ID:st63742014

Date Code:2223+

IRF7341TRPBF_製品イメージ01

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文件

規格書


商品說明

CategoryDiscrete semiconductors
ManufacturerINFINEON
SeriesHEXFET®
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C4.7A
Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
Power - Max2W
Rds On (Max) @ Id, Vgs50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id1V @ 250μA
Gate charge (Qg) when Vgs is applied (max)36nC @ 10V
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Operating Temperature Range-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Device Package8-SO

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

庫存量: 20,000

MOQ:1

SPQ:1

數量

定價(美元) 總金額
購買數量單價(FOB JAPAN)
1 - 9 $1.343
10 - 49 $0.993
50 - 99 $0.588
100 - 499 $0.537
500 - 999 $0.503
1,000 - 1,999 $0.497
2,000 - 3,999 $0.491
4,000 - $0.49

替代型號

IRF7341PBF

Infineon

IRF7343PBF

Infineon

ZXMN6A25N8TA

Diodes Inc.