SI9435BDY-T1-E3
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | VISHAY |
| Series | TrenchFETR |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A(TA) |
| Power Dissipation (Max) | 1.3W(Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhms @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | 8-SOIC |
| Technology | Mosfet (Metal Oxide) |
| FET Feature | Logic Level Gate |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
