CSD86360Q5D

Texas Instruments

庫存類別:質量保證

供應商排名:B-1

Management ID:st49397622

Date Code:19+

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文件

規格書


商品說明

CategoryDiscrete semiconductors
ManufacturerTexas Instruments
SeriesNexFET?
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C50 A
Input Capacitance (Ciss) (Max) @ Vds2060pF @ 12.5
Power - Max13W
Vgs(th) (Max) @ Id2.1V @ 250μA
Gate charge (Qg) when Vgs is applied (max)12.6nC @ 4.5V
TechnologyMOSFET (Metal Oxide)
ConfigurationNチャンネル2個(ハーフブリッジ)
FET FeatureLogic Level Gate
Operating Temperature Range-55°C ~ 150°C(TJ)
Mounting TypeSurface Mount
Device Package8-LSON(5x6)

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

庫存量: 1,000


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