IRL530NSTRLPBF
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文件
商品說明
| Category | Discrete semiconductors Discrete single |
| Manufacturer | INFINEON |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V |
| Power Dissipation (Max) | 3.8W(Ta), 79W(Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhms @ 9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Device Package | D2PAK |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 800
MOQ:800
SPQ:800
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 800 - 1,599 | $0.812 |
| 1,600 - 2,399 | $0.763 |
| 2,400 - 3,999 | $0.716 |
| 4,000 - 7,199 | $0.646 |
| 7,200 - | $0.622 |
| - | - |
| - | - |
| - | - |
