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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	最低訂貨數量 / 後續訂購數量	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Mounting Type	Device Package	Technology	FET Feature
質量保證 B-1	來自供應商的訂	IRFS7730TRL7PP INFINEON	1			預計 11個工作天	核友型號：st75141560	Infineon Technologies	StrongIRFET?	N-Channel	75V	6V, 10V	240A(Tc)	13970 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250μA	428 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK(7-Lead)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS7730TRL7PP INFINEON TECHNOLOGIES	800		MOQ : 800 SPQ : 1	預計 11個工作天	核友型號：st70647330	Infineon Technologies	StrongIRFET?	N-Channel	75V	6V, 10V	240A(Tc)	13970 pF @ 25 V	375W(Tc)	2mOhms @ 100A, 10V	3.7V @ 250μA	428 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK(7-Lead)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS7730TRLPBF INFINEON	5			預計 11個工作天	核友型號：st75141561	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	195A(Tc)	13660 pF @ 25 V	375W(Tc)	2.6mOhms @ 100A, 10V	3.7V @ 250μA	407 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	TO-263AB(D2PAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS7734TRLPBF INFINEON	3			預計 11個工作天	核友型號：st75141562	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	183A(Tc)	10150 pF @ 25 V	290W(Tc)	3.5mOhms @ 100A, 10V	3.7V @ 250μA	270 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	PG-TO263-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFS7787TRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141563	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	76A(Tc)	4020 pF @ 25 V	125W(Tc)	8.4mOhms @ 46A, 10V	3.7V @ 100μA	109 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	PG-TO263-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFSL3107PBF INFINEON	10			預計 11個工作天	核友型號：st75141564	Infineon Technologies	HEXFETR	N-Channel	75V	10V	195A(Tc)	9370 pF @ 50 V	370W(Tc)	3mOhms @ 140A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFSL3306PBF INFINEON	20			預計 11個工作天	核友型號：st75141565	Infineon Technologies	HEXFETR	N-Channel	60V	10V	120A(Tc)	4520 pF @ 50 V	230W(Tc)	4.2mOhms @ 75A, 10V	4V @ 150μA	120 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFSL38N20DPBF INFINEON	10			預計 11個工作天	核友型號：st75141566	Infineon Technologies	HEXFETR	N-Channel	200V		43A(Tc)	2900 pF @ 25 V		54mOhms @ 26A, 10V	5V @ 250μA	91 nC @ 10 V			Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFSL4310PBF INFINEON	2			預計 11個工作天	核友型號：st75141567	Infineon Technologies	HEXFETR	N-Channel	100V	10V	130A(Tc)	7670 pF @ 50 V	300W(Tc)	7mOhms @ 75A, 10V	4V @ 250μA	250 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFSL7437PBF INFINEON	10			預計 11個工作天	核友型號：st75141568	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	195A(Tc)	7330 pF @ 25 V	230W(Tc)	1.8mOhms @ 100A, 10V	3.9V @ 150μA	225 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFSL7440PBF INFINEON	10			預計 11個工作天	核友型號：st75141569	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	40V	6V, 10V	120A(Tc)	4730 pF @ 25 V	208W(Tc)	2.5mOhms @ 100A, 10V	3.9V @ 100μA	135 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFTS8342TRPBF INFINEON	3,000	21+		預計 16個工作天	核友型號：st49404702	Infineon Technologies	HEXFETR	N-Channel	30V	4.5V, 10V	8.2A(TA)	560 pF @ 25 V	2W(Ta)	19mOhms @ 8.2A, 10V	2.35V @ 25μA	4.8 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	6-TSOP	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFTS9342TRPBF INFINEON	18,000	21+		預計 16個工作天	核友型號：st49404703	Infineon Technologies	HEXFETR	P-Channel	30V	4.5V, 10V	5.8A(TA)	595 pF @ 25 V	2W(Ta)	40mOhms @ 5.8A, 10V	2.4V @ 25μA	12 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	6-TSOP	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFTS9342TRPBF INFINEON	3			預計 11個工作天	核友型號：st75141571	Infineon Technologies	HEXFETR	P-Channel	30V	4.5V, 10V	5.8A(TA)	595 pF @ 25 V	2W(Ta)	40mOhms @ 5.8A, 10V	2.4V @ 25μA	12 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Surface Mount	6-TSOP	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU024NPBF INFINEON	200	25+		預計 11個工作天	核友型號：st75029409	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	75mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU024NPBF INFINEON	8,791	17+		預計 11個工作天	核友型號：st71361819	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	75mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFU120NPBF INFINEON	21,000	21+		預計 16個工作天	核友型號：st49404707	Infineon Technologies	HEXFETR	N-Channel	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W(Tc)	210mOhms @ 5.6A, 10V	4V @ 250μA	25 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU120NPBF INFINEON	1,000	22+		預計 11個工作天	核友型號：st71361820	Infineon Technologies	HEXFETR	N-Channel	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W(Tc)	210mOhms @ 5.6A, 10V	4V @ 250μA	25 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU120NPBF INFINEON	100			預計 11個工作天	核友型號：st75141572	Infineon Technologies	HEXFETR	N-Channel	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W(Tc)	210mOhms @ 5.6A, 10V	4V @ 250μA	25 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU120NPBF INFINEON TECHNOLOGIES	3,000		MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st70647332	Infineon Technologies	HEXFETR	N-Channel	100V	10V	9.4A(Tc)	330 pF @ 25 V	48W(Tc)	210mOhms @ 5.6A, 10V	4V @ 250μA	25 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU220NPBF INFINEON	8,280			預計 11個工作天	核友型號：st75141573	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5A(Tc)	300 pF @ 25 V	43W(Tc)	600mOhms @ 2.9A, 10V	4V @ 250μA	23 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂海外位置	IRFU220NPBF INFINEON	445	20+		預計 16個工作天	核友型號：st49404708	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5A(Tc)	300 pF @ 25 V	43W(Tc)	600mOhms @ 2.9A, 10V	4V @ 250μA	23 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFU220NPBF INFINEON	2,545	20+		預計 11個工作天	核友型號：st71361821	Infineon Technologies	HEXFETR	N-Channel	200V	10V	5A(Tc)	300 pF @ 25 V	43W(Tc)	600mOhms @ 2.9A, 10V	4V @ 250μA	23 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFU2405PBF INFINEON	8			預計 11個工作天	核友型號：st75141575	Infineon Technologies	HEXFETR	N-Channel	55V	10V	56A(Tc)	2430 pF @ 25 V	110W(Tc)	16mOhms @ 34A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3410PBF INFINEON	84			預計 11個工作天	核友型號：st75141577	Infineon Technologies	HEXFETR	N-Channel	100V	10V	31A(Tc)	1690 pF @ 25 V	3W(Ta), 110W(Tc)	39mOhms @ 18A, 10V	4V @ 250μA	56 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3410PBF INFINEON TECHNOLOGIES	3,000		MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st70647333	Infineon Technologies	HEXFETR	N-Channel	100V	10V	31A(Tc)	1690 pF @ 25 V	3W(Ta), 110W(Tc)	39mOhms @ 18A, 10V	4V @ 250μA	56 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU3910PBF INFINEON	110			預計 11個工作天	核友型號：st75141578	Infineon Technologies	HEXFETR	N-Channel	100V	10V	16A(Tc)	640 pF @ 25 V	79W(Tc)	115mOhms @ 10A, 10V	4V @ 250μA	44 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU4510PBF INFINEON	536			預計 11個工作天	核友型號：st75141579	Infineon Technologies	HEXFETR	N-Channel	100V	10V	56A(Tc)	3031 pF @ 50 V	143W(Tc)	13.9mOhms @ 38A, 10V	4V @ 100μA	81 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU4615PBF INFINEON	6,000	21+		預計 11個工作天	核友型號：st71361822	Infineon Technologies	HEXFETR	N-Channel	150V	10V	33A(Tc)	1750 pF @ 50 V	144W(Tc)	42mOhms @ 21A, 10V	5V @ 100μA	26 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU5305PBF INFINEON	16			預計 11個工作天	核友型號：st75141580	Infineon Technologies	HEXFETR	P-Channel	55V	10V	31A(Tc)	1200 pF @ 25 V	110W(Tc)	65mOhms @ 16A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFU5305PBF INFINEON	2,950	1533+		預計 16個工作天	核友型號：st50161853	Infineon Technologies	HEXFETR	P-Channel	55V	10V	31A(Tc)	1200 pF @ 25 V	110W(Tc)	65mOhms @ 16A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU5410PBF INFINEON	34,560	17+		預計 11個工作天	核友型號：st71361823	Infineon Technologies	HEXFETR	P-Channel	100V	10V	13A(Tc)	760 pF @ 25 V	66W(Tc)	205mOhms @ 7.8A, 10V	4V @ 250μA	58 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU5505PBF INFINEON	30			預計 11個工作天	核友型號：st75141581	Infineon Technologies	HEXFETR	P-Channel	55V	10V	18A(Tc)	650 pF @ 25 V	57W(Tc)	110mOhms @ 9.6A, 10V	4V @ 250μA	32 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFU5505PBF INFINEON	15,582	19+		預計 16個工作天	End of Life 核友型號：st49404715	Infineon Technologies	HEXFETR	P-Channel	55V	10V	18A(Tc)	650 pF @ 25 V	57W(Tc)	110mOhms @ 9.6A, 10V	4V @ 250μA	32 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU7440PBF INFINEON	10			預計 11個工作天	核友型號：st75141582	Infineon Technologies	HEXFETR	N-Channel	40V	6V, 10V	90A(Tc)	4610 pF @ 25 V	140W(Tc)	2.4mOhms @ 90A, 10V	3.9V @ 100μA	134 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU7740PBF INFINEON TECHNOLOGIES	3,000		MOQ : 3,000 SPQ : 1	預計 11個工作天	核友型號：st70647334	Infineon Technologies	HEXFETR, StrongIRFET?	N-Channel	75V	6V, 10V	87A(Tc)	4430 pF @ 25 V	140W(Tc)	7.2mOhms @ 52A, 10V	3.7V @ 100μA	126 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFU9024NPBF INFINEON	3			預計 11個工作天	核友型號：st75141583	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFU9024NPBF INFINEON	5,625	22+		預計 11個工作天	核友型號：st71361824	Infineon Technologies	HEXFETR	P-Channel	55V	10V	11A(Tc)	350 pF @ 25 V	38W(Tc)	175mOhms @ 6.6A, 10V	4V @ 250μA	19 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Through Hole	IPAK(TO-251AA)	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFZ24NPBF INFINEON	24			預計 11個工作天	核友型號：st75141584	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	70mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ24NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742501	Infineon Technologies	HEXFETR	N-Channel	55V	10V	17A(Tc)	370 pF @ 25 V	45W(Tc)	70mOhms @ 10A, 10V	4V @ 250μA	20 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ34NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st72742502	Infineon Technologies	HEXFETR	N-Channel	55V	10V	29A(Tc)	700 pF @ 25 V	68W(Tc)	40mOhms @ 16A, 10V	4V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFZ34NPBF INFINEON	1,285	21+		預計 16個工作天	核友型號：st49404719	Infineon Technologies	HEXFETR	N-Channel	55V	10V	29A(Tc)	700 pF @ 25 V	68W(Tc)	40mOhms @ 16A, 10V	4V @ 250μA	34 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)	Standard
質量保證 B-1	來自供應商的訂	IRFZ44ESTRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141585	Infineon Technologies	HEXFETR	N-Channel	60V	10V	48A(Tc)	1360 pF @ 25 V	110W(Tc)	23mOhms @ 29A, 10V	4V @ 250μA	60 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	1,081			預計 11個工作天	核友型號：st75141586	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂海外位置	IRFZ44NPBF INFINEON	12,605	21+		預計 16個工作天	核友型號：st49404721	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	8,680	2113		預計 10個工作天	核友型號：st65285852	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	1,000	24+		預計 11個工作天	核友型號：st75019585	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON	50,000	20+		預計 11個工作天	核友型號：st71361825	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NPBF INFINEON TECHNOLOGIES	1,000		MOQ : 1,000 SPQ : 1	預計 11個工作天	核友型號：st70647335	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	IRFZ44NSTRLPBF INFINEON	10			預計 11個工作天	核友型號：st75141587	Infineon Technologies	HEXFETR	N-Channel	55V	10V	49A(Tc)	1470 pF @ 25 V	3.8W(Ta), 94W(Tc)	17.5mOhms @ 25A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Surface Mount	D2PAK	Mosfet (Metal Oxide)