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核友管理編號		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1 		來自供應商的訂

AUIRFZ48N
INFINEON

360  

預計 11個工作天

核友型號：st75119391

Infineon Technologies HEXFETR N-Channel 55V 10V 69A(Tc) 1900 pF @ 25 V 160W(Tc) 14mOhms @ 40A, 10V 4V @ 100μA 63 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRL1404ZSTRL
INFINEON

10  

預計 11個工作天

核友型號：st75119397

Infineon Technologies HEXFETR N-Channel 40V 4.5V, 10V 160A(Tc) 5080 pF @ 25 V 200W(Tc) 3.1mOhms @ 75A, 10V 2.7V @ 250μA 110 nC @ 5 V ±16V -55°C ~ 175°C(TJ) Surface Mount D2PAK Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRL3705N
INFINEON

1  

預計 11個工作天

核友型號：st75119398

Infineon Technologies HEXFETR N-Channel 55V 89A(Tc) 3600 pF @ 25 V 170W(Tc) 10mOhms @ 46A, 10V 2V @ 250μA 98 nC @ 5 V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRL3705ZL

AUIRL3705ZL
INFINEON

10  

預計 11個工作天

核友型號：st75119399

Infineon Technologies HEXFETR N-Channel 55V 75A(Tc) 2880 pF @ 25 V 130W(Tc) 8mOhms @ 52A, 10V 3V @ 250μA 60 nC @ 5 V -55°C ~ 175°C(TJ) Through Hole TO-262 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRL3705ZS
INFINEON

277  

預計 11個工作天

核友型號：st75119400

Infineon Technologies HEXFETR N-Channel 55V 4.5V, 10V 75A(Tc) 2880 pF @ 25 V 130W(Tc) 8mOhms @ 52A, 10V 3V @ 250μA 60 nC @ 5 V ±16V -55°C ~ 175°C(TJ) Surface Mount D2PAK Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLL014NTR
INFINEON

21  

預計 11個工作天

核友型號：st75119401

Infineon Technologies HEXFETR N-Channel 55V 4V, 10V 2A(TA) 230 pF @ 25 V 1W(Ta) 140mOhms @ 2A, 10V 2V @ 250μA 14 nC @ 10 V ±16V -55°C ~ 150°C(TJ) Surface Mount PG-SOT223-4 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLL024NTR
INFINEON

30  

預計 11個工作天

核友型號：st75119402

Infineon Technologies HEXFETR N-Channel 55V 4V, 10V 3.1A(TA) 510 pF @ 25 V 1W(Ta) 65mOhms @ 3.1A, 10V 2V @ 250μA 15.6 nC @ 5 V ±16V -55°C ~ 150°C(TJ) Surface Mount SOT-223 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLL2705TR
INFINEON

2  

預計 11個工作天

核友型號：st75119403

Infineon Technologies HEXFETR N-Channel 55V 4V, 10V 5.2A(TA) 870 pF @ 25 V 1W(Ta) 40mOhms @ 3.8A, 10V 2V @ 250μA 48 nC @ 10 V ±16V -55°C ~ 150°C(TJ) Surface Mount PG-SOT223-4 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLR120NTRL
INFINEON

94  

預計 11個工作天

核友型號：st75119404

Infineon Technologies HEXFETR N-Channel 100V 4V, 10V 10A(Tc) 440 pF @ 25 V 48W(Tc) 185mOhms @ 6A, 10V 2V @ 250μA 20 nC @ 5 V ±16V -55°C ~ 175°C(TJ) Surface Mount TO-252AA (DPAK) Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLR2905ZTRL
INFINEON

10  

預計 11個工作天

核友型號：st75119405

Infineon Technologies HEXFETR N-Channel 55V 42A(Tc) 1570 pF @ 25 V 110W(Tc) 13.5mOhms @ 36A, 10V 3V @ 250μA 35 nC @ 5 V -55°C ~ 175°C(TJ) Surface Mount TO-252AA (DPAK) Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLR3110Z
INFINEON

1  

預計 11個工作天

核友型號：st75119406

Infineon Technologies HEXFETR N-Channel 100V 4.5V, 10V 42A(Tc) 3980 pF @ 25 V 140W(Tc) 14mOhms @ 38A, 10V 2.5V @ 100μA 48 nC @ 4.5 V ±16V -55°C ~ 175°C(TJ) Standard Yes Surface Mount TO-252AA (DPAK) Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLR3410

AUIRLR3410
INFINEON

10  

預計 11個工作天

核友型號：st75119407

Infineon Technologies HEXFETR N-Channel 100V 4V, 10V 17A(Tc) 800 pF @ 25 V 79W(Tc) 105mOhms @ 10A, 10V 2V @ 250μA 34 nC @ 5 V ±16V -55°C ~ 175°C(TJ) Surface Mount TO-252AA (DPAK) Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLR3410TRL
INFINEON

20 1735  

預計 11個工作天

核友型號：st76084731

Infineon Technologies HEXFETR N-Channel 100V 4V, 10V 17A(Tc) 800 pF @ 25 V 79W(Tc) 105mOhms @ 10A, 10V 2V @ 250μA 34 nC @ 5 V ±16V -55°C ~ 175°C(TJ) Surface Mount PG-TO252-3 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLS4030-7P
INFINEON

1  

預計 11個工作天

核友型號：st75119408

Infineon Technologies HEXFETR N-Channel 100V 4.5V, 10V 190A(Tc) 11490 pF @ 50 V 370W(Tc) 3.9mOhms @ 110A, 10V 2.5V @ 250μA 140 nC @ 4.5 V ±16V -55°C ~ 175°C(TJ) Surface Mount D2PAK(7-Lead) Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

AUIRLZ44Z

AUIRLZ44Z
INFINEON

46  

預計 11個工作天

核友型號：st75119409

Infineon Technologies HEXFETR N-Channel 55V 4.5V, 10V 51A(Tc) 1620 pF @ 25 V 80W(Tc) 13.5mOhms @ 31A, 10V 3V @ 250μA 36 nC @ 5 V ±16V -55°C ~ 175°C(TJ) Through Hole TO-220AB Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BS170G
ON SEMICONDUCTOR

920 0710+  

預計 11個工作天

核友型號：st66238403

ONSEMI N-Channel 60V 10V 500mA(TA) 60 pF @ 10 V 350mW(Ta) 5Ohms @ 200mA, 10V 3V @ 1mA ±20V ±20V -55°C ~ 150°C(TJ) Through Hole TO-92(TO-226) Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB008NE2LX
INFINEON

3  

預計 11個工作天

核友型號：st75123216

Infineon Technologies MOSFET Nch 25V 800 μOhms 2 V DirectFET MX (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂

BSB012NE2LX
INFINEON

3,710  

預計 11個工作天

核友型號：st72139515

Infineon Technologies OptiMOS? N-Channel 25V 4.5V, 10V 37A(TA), 170A(Tc) 4900 pF @ 12 V 2.8W(Ta), 57W(Tc) 1.2mOhms @ 30A, 10V 2V @ 250μA 67 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB012NE2LXI
INFINEON

2,000  

預計 8個工作天

核友型號：st73307096

Infineon Technologies OptiMOS MOSFET Nch 25V 1.6 mOhms@4.5V 2 V Surface Mount MG-WDSON-2
質量保證
B-1 		來自供應商的訂

BSB013NE2LXI
INFINEON

5  

預計 11個工作天

核友型號：st75123217

Infineon Technologies MOSFET Nch 25V 1.3 mOhms 2 V DirectFET MX (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂
10  

預計 11個工作天

核友型號：st75123218

Infineon Technologies OptiMOS? N-Channel 25V 4.5V, 10V 36A(TA), 163A(Tc) 4400 pF @ 12 V 2.8W(Ta), 57W(Tc) 1.3mOhms @ 30A, 10V 2V @ 250μA 62 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB014N04LX3G
INFINEON

4,438  

預計 8個工作天

核友型號：st73307097

Infineon Technologies MOSFET Nch 40V 1.4 mOhms 2 V Surface Mount DirectFET MZ (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂

BSB014N04LX3GXUMA1
11  

預計 11個工作天

核友型號：st75123219

Infineon Technologies OptiMOS? N-Channel 40V 4.5V, 10V 36A(TA), 180A(Tc) 16900 pF @ 20 V 2.8W(Ta), 89W(Tc) 1.4mOhms @ 30A, 10V 2V @ 250μA 196 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75123220

Infineon Technologies OptiMOS? N-Channel 40V 10V 36A(TA), 180A(Tc) 12000 pF @ 20 V 2.8W(Ta), 89W(Tc) 1.5mOhms @ 30A, 10V 4V @ 250μA 142 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB018NE2LXG
INFINEON

30,000  

預計 8個工作天

核友型號：st73307099

Infineon Technologies
質量保證
B-1 		來自供應商的訂

BSB053N03LPG
INFINEON

25,000  

預計 8個工作天

核友型號：st73307101

Infineon Technologies OptiMOS? N-Channel 30V 4.5V, 10V 17A(TA), 71A(Tc) 2700 pF @ 15 V 2.3W(Ta), 42W(Tc) 5.3mOhms @ 30A, 10V 2.2V @ 250μA 29 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB056N10NN3 G
INFINEON

24,110  

預計 8個工作天

核友型號：st73307102

Infineon Technologies MOSFET Nch 100V 83A 5.6 mOhms 3.5V Standard DirectFET MN (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂

BSB056N10NN3G
INFINEON

10,000  

預計 8個工作天

核友型號：st73307103

Infineon Technologies MOSFET Nch 100V 83A 5.6 mOhms 3.5V Standard Surface Mount DirectFET MN (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂
10  

預計 11個工作天

核友型號：st75123221

Infineon Technologies OptiMOS? N-Channel 100V 6V, 10V 9A(TA), 83A(Tc) 5500 pF @ 50 V 2.8W(Ta), 78W(Tc) 5.6mOhms @ 30A, 10V 3.5V @ 100μA 74 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB104N08NP3G
INFINEON

5  

預計 11個工作天

核友型號：st75123222

Infineon Technologies MOSFET Nch 80V 50A 10.4 mOhms 3.5V Standard Surface Mount DirectFET MP (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂

BSB165N15NZ3G
INFINEON

3  

預計 11個工作天

核友型號：st75123223

Infineon Technologies MOSFET Nch 150V 45A 16.5 mOhms 4V Standard Surface Mount DirectFET MZ (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂

BSB165N15NZ3G
INFINEON

5,000  

預計 8個工作天

核友型號：st73307105

Infineon Technologies MOSFET Nch 150V 45A 16.5 mOhms 4V Standard Surface Mount DirectFET MZ (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂
5  

預計 11個工作天

核友型號：st75123224

Infineon Technologies OptiMOS? N-Channel 150V 8V, 10V 9A(TA), 45A(Tc) 2800 pF @ 75 V 2.8W(Ta), 78W(Tc) 16.5mOhms @ 30A, 10V 4V @ 110μA 35 nC @ 10 V ±20V -40°C ~ 150°C(TJ) Surface Mount MG-WDSON-2, CanPAK M? Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂

BSB280N15NZ3 G
INFINEON

5,934  

預計 8個工作天

核友型號：st73307106

Infineon Technologies MOSFET Nch 150V 28 mOhms DirectFET MZ (MG-WDSON-2)
質量保證
B-1 		來自供應商的訂

BSC004NE2LS5
INFINEON

50 21+  

預計 11個工作天

核友型號：st75022072

Infineon Technologies 479A 2V Standard
質量保證
B-1 		來自供應商的訂

BSC005N03LS5
INFINEON

11,358 21+  

預計 16個工作天

核友型號：st76078688

Infineon Technologies 433A 2V Standard
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75123225

Infineon Technologies N-Channel 30V 4.5V, 10V 42A(TA), 433A(Tc) 8000 pF @ 15 V 3W(Ta), 188W(Tc) 0.55mOhms @ 50A, 10V 2V @ 10mA 128 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Surface Mount PG-TDSON-8 FL Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂
35  

預計 11個工作天

核友型號：st75123226

Infineon Technologies OptiMOS? N-Channel 40V 4.5V, 10V 381A(Tc) 8400 pF @ 20 V 188W 0.7mOhms @ 50A, 10V 2.3V @ 250μA 94 nC @ 4.5 V ±20V -55°C ~ 175°C(TJ) Surface Mount PG-TDSON-8-6 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂
海外位置

BSC009NE2LS
INFINEON

5,000 23+  

預計 16個工作天

核友型號：st49395306

Infineon Technologies MOSFET Nch 25V 255A 900 μOhms 2.2V Standard TDSON-8
質量保證
B-1 		來自供應商的訂

BSC009NE2LS
INFINEON

2,967  

預計 8個工作天

核友型號：st73307107

Infineon Technologies MOSFET Nch 25V 255A 900 μOhms 2.2V Standard TDSON-8

Recommended Rectifiers - FETs