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Semiconductors > Discrete semiconductors >
FETs

點擊數22753～ / 型號名稱： / 狀態：全部 / 數量：0PCS~

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庫存類別供應商排名	庫存所在位置	型號 / 製造商 / 其他	庫存量	生產年份/批號	預定出貨日	資訊核友管理編號	Manufacturer	Series	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature Range	Applications	Automotive	Mounting Type	Device Package	Technology
質量保證 B-1	來自供應商的訂	2V7002KT1G ON SEMICONDUCTOR	1,218		預計 11個工作天	核友型號：st75099632	ONSEMI		N-Channel	60V	4.5V, 10V	320mA(TA)	24.5 pF @ 20 V	300mW(Tj)	1.6Ohms @ 500mA, 10V	2.3V @ 250μA	0.7 nC @ 4.5 V	±20V	-55°C ~ 150°C(TJ)			Surface Mount	SOT-23-3(TO-236)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	2V7002LT1G ON SEMICONDUCTOR	9,000	2010	預計 11個工作天	核友型號：st65326328	ONSEMI		N-Channel	60V	5V, 10V	115mA(Tc)	50 pF @ 25 V	225mW(Ta)	7.5Ohms @ 500mA, 10V	2.5V @ 250μA	±20V	±20V	-55°C ~ 150°C(TJ)			Surface Mount	SOT-23-3(TO-236)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	2V7002LT1G ON SEMICONDUCTOR	13,792		預計 11個工作天	核友型號：st75099633	ONSEMI		N-Channel	60V	5V, 10V	115mA(Tc)	50 pF @ 25 V	225mW(Ta)	7.5Ohms @ 500mA, 10V	2.5V @ 250μA	±20V	±20V	-55°C ~ 150°C(TJ)			Surface Mount	SOT-23-3(TO-236)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AIMW120R035M1HXKSA1 INFINEON	1		預計 11個工作天	核友型號：st75117695	Infineon Technologies	CoolSiC?	N-Channel	1200V	18V	52A(Tc)	2130 pF @ 800 V	228W(Tc)	46mOhms @ 25A, 18V	5.7V @ 10mA	59 nC @ 18 V	+23V, -7V	-55°C ~ 175°C(TJ)			Through Hole	PG-TO247-3-41	Sicfet (Silicon Carbide)
質量保證 B-1	來自供應商的訂	AUIRF1010EZSTRL INFINEON	10		預計 11個工作天	核友型號：st75119344	Infineon Technologies	HEXFETR	N-Channel	60V	10V	75A(Tc)	2810 pF @ 25 V	140W(Tc)	8.5mOhms @ 51A, 10V	4V @ 250μA	86 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Surface Mount	PG-TO263-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF1018ES INFINEON	10		預計 11個工作天	核友型號：st75119345	Infineon Technologies	HEXFETR	N-Channel	60V	10V	79A(Tc)	2290 pF @ 50 V	110W(Tc)	8.4mOhms @ 47A, 10V	4V @ 100μA	69 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF1404ZSTRL INFINEON	90		預計 11個工作天	核友型號：st75119346	Infineon Technologies	HEXFETR	N-Channel	40V	10V	160A(Tc)	4340 pF @ 25 V	200W(Tc)	3.7mOhms @ 75A, 10V	4V @ 250μA	150 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Surface Mount	TO-263AB(D2PAK)	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF2804STRL INFINEON	10		預計 11個工作天	核友型號：st75119347	Infineon Technologies	HEXFETR	N-Channel	40V	10V	195A(Tc)	6450 pF @ 25 V	300W(Tc)	2mOhms @ 75A, 10V	4V @ 250μA	240 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF3205 INFINEON	2		預計 11個工作天	核友型號：st75119348	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	3247 pF @ 25 V	200W(Tc)	8mOhms @ 62A, 10V	4V @ 250μA	146 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF3205Z INFINEON	5		預計 11個工作天	核友型號：st75119349	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	3450 pF @ 25 V	170W(Tc)	6.5mOhms @ 66A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Yes	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF3205ZSTRL INFINEON	1		預計 11個工作天	核友型號：st75119350	Infineon Technologies	HEXFETR	N-Channel	55V	10V	75A(Tc)	3450 pF @ 25 V	170W(Tc)	6.5mOhms @ 66A, 10V	4V @ 250μA	110 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF3305 INFINEON	81		預計 11個工作天	核友型號：st75119351	Infineon Technologies	HEXFETR	N-Channel	55V	10V	140A(Tc)	3650 pF @ 25 V	330W(Tc)	8mOhms @ 75A, 10V	4V @ 250μA	150 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Yes	Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF3805 INFINEON	199		預計 11個工作天	核友型號：st75119352	Infineon Technologies	HEXFETR	N-Channel	55V	10V	160A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250μA	290 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Through Hole	TO-220	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF3805L INFINEON	196		預計 11個工作天	核友型號：st75119353	Infineon Technologies	HEXFETR	N-Channel	55V	10V	160A(Tc)	7960 pF @ 25 V	300W(Tc)	3.3mOhms @ 75A, 10V	4V @ 250μA	290 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF4905L INFINEON	10		預計 11個工作天	核友型號：st75119354	Infineon Technologies	HEXFETR	P-Channel	55V	10V	42A(Tc)	3500 pF @ 25 V	200W(Tc)	20mOhms @ 42A, 10V	4V @ 250μA	180 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)			Through Hole	TO-262	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF4905S INFINEON	5		預計 11個工作天	核友型號：st75119355	Infineon Technologies	HEXFETR	P-Channel	55V	10V	42A(Tc)	3500 pF @ 25 V	200W(Tc)	20mOhms @ 42A, 10V	4V @ 250μA	180 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)	Standard	Yes	Surface Mount	D2PAK	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF4905STRL INFINEON	2		預計 11個工作天	核友型號：st75119356	Infineon Technologies	HEXFETR	P-Channel	55V	10V	42A(Tc)	3500 pF @ 25 V	200W(Tc)	20mOhms @ 42A, 10V	4V @ 250μA	180 nC @ 10 V	±20V	-55°C ~ 150°C(TJ)			Surface Mount	PG-TO263-3	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF540Z INFINEON	2		預計 11個工作天	核友型號：st75119357	Infineon Technologies	HEXFETR	N-Channel	100V	10V	36A(Tc)	1770 pF @ 25 V	92W(Tc)	26.5mOhms @ 22A, 10V	4V @ 250μA	63 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)	Standard	Yes	Through Hole	TO-220AB	Mosfet (Metal Oxide)
質量保證 B-1	來自供應商的訂	AUIRF7103QTR INFINEON	497		預計 11個工作天	核友型號：st75119358	Infineon Technologies	HEXFETR	50 V	3 A	255pF @ 25V	2.4W	130mOhms @ 3A, 10V	3V @ 250μA	15nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)		-55°C ~ 175°C(TJ)			Surface Mount	8-SOIC
質量保證 B-1	來自供應商的訂	AUIRF7313QTR INFINEON	14		預計 11個工作天	核友型號：st75119360	Infineon Technologies	HEXFETR	30 V	6.9 A	755pF @ 25V	2.4W	29mOhms @ 6.9A, 10V	3V @ 250μA	33nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-55°C ~ 175°C(TJ)			Surface Mount	8-SOIC
質量保證 B-1	來自供應商的訂	AUIRF7341QTR INFINEON	1		預計 11個工作天	核友型號：st75119361	Infineon Technologies	HEXFETR	55 V	5.1 A	780pF @ 25V	2.4W	50mOhms @ 5.1A, 10V	3V @ 250μA	44nC @ 10V	MOSFET (Metal Oxide)	2 Nチャンネル(デュアル)	Logic Level Gate	-55°C ~ 175°C(TJ)			Surface Mount	8-SOIC
質量保證 B-1	來自供應商的訂	AUIRF7640S2TR INFINEON	100		預計 11個工作天	核友型號：st75119363	Infineon Technologies	HEXFETR	N-Channel	60V	10V	5.8A(TA), 21A(Tc)	450 pF @ 25 V	2.4W(Ta), 30W(Tc)	36mOhms @ 13A, 10V	5V @ 25μA	11 nC @ 10 V	±20V	-55°C ~ 175°C(TJ)			Surface Mount	DIRECTFET SB	Mosfet (Metal Oxide)