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G630J
Goford Semiconductor
RoHS状态:RoHS
库存类别:代理店库存
供应商排名:A-1
Management ID:st68274671
Date Code:2316
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | Goford Semiconductor |
| Series | TrenchFETR |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 509 pF @ 25 V |
| Power Dissipation (Max) | 83W(Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhms @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | -55°C ~ 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-251 |
| Technology | Mosfet (Metal Oxide) |
| FET Feature | Standard |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 2,000
MOQ:75
SPQ:1
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 75 - 14,999 | $0.326 |
| 15,000 - 29,999 | $0.239 |
| 30,000 - | $0.215 |
| - | - |
| - | - |
| - | - |
| - | - |
| - | - |
