QS8J12TCR
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产品属性
| Category | 分立半导体 Arrays |
| Manufacturer | ROHM |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 6V |
| Power - Max | 550mW |
| Rds On (Max) @ Id, Vgs | 29mOhms @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate charge (Qg) when Vgs is applied (max) | 40nC @ 4.5V |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2Pチャンネル(デュアル) |
| FET Feature | Logic Level Gate, 1.5V駆動 |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Surface Mount |
| Device Package | TSMT8 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 30
MOQ:1
SPQ:1
预计进货数量（延期交货）: 0
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 9 | $0.18 |
| 10 - 49 | $0.175 |
| 50 - 99 | $0.172 |
| 100 - 499 | $0.169 |
| 500 - 999 | $0.168 |
| 1,000 - 1,999 | $0.168 |
| 2,000 - 3,999 | $0.167 |
| 4,000 - | $0.167 |
