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R6030ENXC7G
文档
产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A(TA) |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
| Power Dissipation (Max) | 86W(Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhms @ 14.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Vgs (Max) | ±20V |
| Operating Temperature Range | 150°C(TJ) |
| Mounting Type | Through Hole |
| Device Package | TO-220FM |
| Technology | Mosfet (Metal Oxide) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 1,000
MOQ:1
SPQ:1
预计进货数量(延期交货): 0
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 4 | $6.147 |
| 5 - 9 | $3.822 |
| 10 - 29 | $3.15 |
| 30 - 49 | $2.703 |
| 50 - 99 | $2.613 |
| 100 - 199 | $2.546 |
| 200 - 299 | $2.512 |
| 300 - | $2.501 |





