SI7850DP-T1-E3

VISHAY

RoHS状态:RoHS

库存类别:代理店库存

供应商排名:A-1

原产国:CN

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Case/Package	SOIC
Contact Plating	Tin
Continuous Drain Current (ID)	6.2 A
Drain to Source Breakdown Voltage	60 V
Drain to Source Resistance	18 mΩ
Drain to Source Voltage (Vdss)	60 V
Dual Supply Voltage	60 V
Element Configuration	Single
Fall Time	10 ns
Gate to Source Voltage (Vgs)	20 V
Height	1.17 mm
Lead Free	Lead Free
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	1.8 W
Manufacturer Package Identifier	S17-0173-Single
Min Operating Temperature	-55 °C
Mount	Surface Mount
Nominal Vgs	3 V
Number of Channels	1
Number of Elements	1
Number of Pins	8
Packaging	Cut Tape
Power Dissipation	1.8 W
Radiation Hardening	No
Rds On Max	22 mΩ
REACH SVHC	Unknown
Resistance	22 mΩ
Rise Time	10 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Termination	SMD/SMT
Threshold Voltage	3 V
Turn-Off Delay Time	25 ns
Turn-On Delay Time	10 ns
Width	5.89 mm