DTD513ZE3TL
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文档
产品属性
| Category | 分立半导体 Discrete single Pre-Biased |
| Manufacturer | ROHM |
| Transistor Type | NPN - Pre-Bias + Diode |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Current - Collector Cutoff (Max) | 500 nA |
| Current - Collector (Ic) (Max) | 500 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA/2V |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Resistor - Base (R1) | 1 kOhms |
| Power - Max | 150 mW |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA/100mA |
| Product Overview | TRANS PREBIAS NPN 12V 0.5A EMT3 |
| Mounting Type | Surface Mount |
| Device Package | EMT3 |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 2,283
MOQ:1
SPQ:1
预计进货数量（延期交货）: 0
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 99 | $0.152 |
| 100 - 299 | $0.115 |
| 300 - 499 | $0.076 |
| 500 - 999 | $0.068 |
| 1,000 - 3,999 | $0.062 |
| 4,000 - 4,999 | $0.058 |
| 5,000 - 9,999 | $0.057 |
| 10,000 - | $0.057 |
