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R6535KNX3C16
文档
产品属性
Category | 分立半导体 Discrete single |
Manufacturer | ROHM |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 35A(Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25 V |
Power Dissipation (Max) | 370W(Tc) |
Rds On (Max) @ Id, Vgs | 115mOhms @ 18.1A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1.3mA |
Vgs (Max) | ±20V |
Technology | Mosfet (Metal Oxide) |
Operating Temperature Range | 150°C(TJ) |
Mounting Type | Through Hole |
Device Package | TO-220AB |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 30
MOQ:1
SPQ:1
预计进货数量(延期交货): 0
购买数量 | 单价(FOB JAPAN) |
---|---|
1 - 4 | $6.841 |
5 - 9 | $3.714 |
10 - 29 | $3.122 |
30 - 49 | $2.727 |
50 - 99 | $2.648 |
100 - 199 | $2.589 |
200 - 299 | $2.56 |
300 - | $2.55 |