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核友型号		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
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1HN04CH-TL-W
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N-Channel 100 V 270mA (Ta) Surface Mount 3-CPH
核友型号：zp2216-2832-1HN04CH-TL-W-ND@0

onsemi - N-Channel 100 V 4V, 10V 270mA (Ta) 15 pF @ 20 V - 8Ohm @ 140mA, 10V 2.6V @ 100µA 0.9 nC @ 10 V ±20V 150°C (TJ) Surface Mount 3-CPH MOSFET (Metal Oxide) -
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1HP04CH-TL-W
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P-Channel 100 V 170mA (Ta) Surface Mount 3-CPH
核友型号：zp2216-2832-1HP04CH-TL-W-ND@0

onsemi - P-Channel 100 V 4V, 10V 170mA (Ta) 14 pF @ 20 V - 18Ohm @ 80mA, 10V 2.6V @ 100µA 0.9 nC @ 10 V ±20V 150°C (TJ) Surface Mount 3-CPH MOSFET (Metal Oxide) -
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1N60G
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N-Channel 600 V 1A (Tj) Surface Mount SOT-223
核友型号：zp2216-4518-1N60GTR-ND@0

UMW UMW N-Channel 600 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount SOT-223 MOSFET (Metal Oxide) -
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1N60G
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N-Channel 600 V 1A (Tj) Surface Mount SOT-223
核友型号：zp2216-4518-1N60GCT-ND@0

UMW UMW N-Channel 600 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount SOT-223 MOSFET (Metal Oxide) -
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1N60L
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N-Channel 600 V 1A (Tj) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-1N60LTR-ND@0

UMW UMW N-Channel 600 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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1N60L
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N-Channel 600 V 1A (Tj) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-1N60LCT-ND@0

UMW UMW N-Channel 600 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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1N65G
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N-Channel 650 V 1A (Tj) Surface Mount SOT-223
核友型号：zp2216-4518-1N65GTR-ND@0

UMW UMW N-Channel 650 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount SOT-223 MOSFET (Metal Oxide) -
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1N65G
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N-Channel 650 V 1A (Tj) Surface Mount SOT-223
核友型号：zp2216-4518-1N65GCT-ND@0

UMW UMW N-Channel 650 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount SOT-223 MOSFET (Metal Oxide) -
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1N65L
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N-Channel 650 V 1A (Tj) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-1N65LTR-ND@0

UMW UMW N-Channel 650 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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1N65L
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N-Channel 650 V 1A (Tj) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-1N65LCT-ND@0

UMW UMW N-Channel 650 V 10V 1A (Tj) 150 pF @ 25 V - 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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2002A

2002A
GOFORD SEMICONDUCTOR

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N-Channel 190 V 5A (Tc) 1.4W (Tc) Surface Mount SOT-23-6L
核友型号：zp2216-3141-2002ATR-ND@0

Goford Semiconductor - N-Channel 190 V 4.5V, 10V 5A (Tc) 733 pF @ 100 V 1.4W (Tc) 540mOhm @ 1A, 10V 3V @ 250µA 16 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount SOT-23-6L MOSFET (Metal Oxide) -
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20N06

20N06
GOFORD SEMICONDUCTOR

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N-Channel 60 V 25A (Tc) 41W (Tc) Surface Mount TO-252
核友型号：zp2216-3141-20N06TR-ND@0

Goford Semiconductor - N-Channel 60 V 4.5V, 10V 25A (Tc) 1609 pF @ 30 V 41W (Tc) 24mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252 MOSFET (Metal Oxide) -
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2300F

2300F
GOFORD SEMICONDUCTOR

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N-Channel 6A (Tc) 1.25W (Tc) Surface Mount SOT-23-3
核友型号：zp2216-4822-2300FTR-ND@0

Goford Semiconductor TrenchFET® N-Channel 2.5V, 4.5V 6A (Tc) 1.25W (Tc) 27mOhm @ 2.3A, 4.5V 900mV @ 250µA ±12V -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 MOSFET (Metal Oxide) -
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2301

2301
GOFORD SEMICONDUCTOR

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P-Channel 3A (Tc) 1W (Tc) Surface Mount SOT-23-3
核友型号：zp2216-4822-2301TR-ND@0

Goford Semiconductor TrenchFET® P-Channel 2.5V, 4.5V 3A (Tc) 1W (Tc) 56mOhm @ 1.7A, 4.5V 900mV @ 250µA ±10V -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 MOSFET (Metal Oxide) -
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2301H

2301H
GOFORD SEMICONDUCTOR

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P-Channel 2.8A (Tc) 890mW (Tc) Surface Mount SOT-23-3
核友型号：zp2216-4822-2301HTR-ND@0

Goford Semiconductor TrenchFET® P-Channel 4.5V, 10V 2.8A (Tc) 890mW (Tc) 75mOhm @ 3A, 10V 2.4V @ 250µA ±20V -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 MOSFET (Metal Oxide) -
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2302

2302
GOFORD SEMICONDUCTOR

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N-Channel 4.3A (Tc) 1W (Tc) Surface Mount SOT-23-3
核友型号：zp2216-4822-2302TR-ND@0

Goford Semiconductor TrenchFET® N-Channel 2.5V, 4.5V 4.3A (Tc) 1W (Tc) 27mOhm @ 2.2A, 4.5V 1.1V @ 250µA ±10V -55°C ~ 150°C (TJ) Surface Mount SOT-23-3 MOSFET (Metal Oxide) -
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25N06
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N-Channel 60 V 25A (Tc) 36.2W (Tc) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-25N06CT-ND@0

UMW UMW N-Channel 60 V 4.5V, 10V 25A (Tc) 939 pF @ 30 V 36.2W (Tc) 29mOhm @ 19A, 10V 2V @ 250µA 21.2 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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25N06
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N-Channel 60 V 25A (Tc) 36.2W (Tc) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-25N06TR-ND@0

UMW UMW N-Channel 60 V 4.5V, 10V 25A (Tc) 939 pF @ 30 V 36.2W (Tc) 29mOhm @ 19A, 10V 2V @ 250µA 21.2 nC @ 10 V ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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25P06

25P06
GOFORD SEMICONDUCTOR

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P-Channel 25A (Tc) 100W (Tc) Surface Mount TO-252
核友型号：zp2216-4822-25P06TR-ND@0

Goford Semiconductor TrenchFET® P-Channel 10V 25A (Tc) 100W (Tc) 32mOhm @ 12A, 10V 3V @ 250µA ±20V -55°C ~ 150°C (TJ) Surface Mount TO-252 MOSFET (Metal Oxide) -
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2N60G
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N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount SOT-223-4
核友型号：zp2216-4518-2N60GTR-ND@0

UMW * N-Channel 600 V 10V 2A (Tc) 44W (Tc) 4.5Ohm @ 1A, 10V 4V @ 250µA ±30V -55°C ~ 155°C (TJ) Surface Mount SOT-223-4 MOSFET (Metal Oxide) -
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2N60G
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N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount SOT-223-4
核友型号：zp2216-4518-2N60GCT-ND@0

UMW * N-Channel 600 V 10V 2A (Tc) 44W (Tc) 4.5Ohm @ 1A, 10V 4V @ 250µA ±30V -55°C ~ 155°C (TJ) Surface Mount SOT-223-4 MOSFET (Metal Oxide) -
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2N60L
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N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-2N60LCT-ND@0

UMW * N-Channel 600 V 10V 2A (Tc) 44W (Tc) 4.5Ohm @ 1A, 10V 4V @ 250µA ±30V -55°C ~ 155°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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2N60L
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N-Channel 600 V 2A (Tc) 44W (Tc) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-2N60LTR-ND@0

UMW * N-Channel 600 V 10V 2A (Tc) 44W (Tc) 4.5Ohm @ 1A, 10V 4V @ 250µA ±30V -55°C ~ 155°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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2N65G
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N-Channel 650 V 2A (Tj) Surface Mount SOT-223
核友型号：zp2216-4518-2N65GTR-ND@0

UMW UMW N-Channel 650 V 10V 2A (Tj) 311 pF @ 25 V - 5.5Ohm @ 1A, 10V 4V @ 250µA 14.5 nC @ 10 V ±30V 150°C (TJ) Surface Mount SOT-223 MOSFET (Metal Oxide) -
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2N65G
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N-Channel 650 V 2A (Tj) Surface Mount SOT-223
核友型号：zp2216-4518-2N65GCT-ND@0

UMW UMW N-Channel 650 V 10V 2A (Tj) 311 pF @ 25 V - 5.5Ohm @ 1A, 10V 4V @ 250µA 14.5 nC @ 10 V ±30V 150°C (TJ) Surface Mount SOT-223 MOSFET (Metal Oxide) -
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2N65L
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N-Channel 650 V 2A (Tj) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-2N65LTR-ND@0

UMW UMW N-Channel 650 V 10V 2A (Tj) 311 pF @ 25 V - 5.5Ohm @ 1A, 10V 4V @ 250µA 14.5 nC @ 10 V ±30V 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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2N65L
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N-Channel 650 V 2A (Tj) Surface Mount TO-252 (DPAK)
核友型号：zp2216-4518-2N65LCT-ND@0

UMW UMW N-Channel 650 V 10V 2A (Tj) 311 pF @ 25 V - 5.5Ohm @ 1A, 10V 4V @ 250µA 14.5 nC @ 10 V ±30V 150°C (TJ) Surface Mount TO-252 (DPAK) MOSFET (Metal Oxide) -
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2N6660

2N6660
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N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
核友型号：zp2216-2N6660-ND@0

Vishay Siliconix - N-Channel 60 V 5V, 10V 990mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 3Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-205AD (TO-39) MOSFET (Metal Oxide) -
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2N6660-2

2N6660-2
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N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
核友型号：zp2216-2N6660-2-ND@0

Vishay Siliconix - N-Channel 60 V 5V, 10V 990mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 3Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-205AD (TO-39) MOSFET (Metal Oxide) -
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2N6660-E3

2N6660-E3
VISHAY SILICONIX

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N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
核友型号：zp2216-2N6660-E3-ND@0

Vishay Siliconix - N-Channel 60 V 5V, 10V 990mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 3Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-205AD (TO-39) MOSFET (Metal Oxide) -
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2N6660JTVP02

2N6660JTVP02
VISHAY SILICONIX

   

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N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
核友型号：zp2216-2N6660JTVP02-ND@0

Vishay Siliconix - N-Channel 60 V 5V, 10V 990mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 3Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-205AD (TO-39) MOSFET (Metal Oxide) -
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2N6660JTXP02

2N6660JTXP02
VISHAY SILICONIX

   

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N-Channel 60 V 990mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-205AD (TO-39)
核友型号：zp2216-2N6660JTXP02-ND@0

Vishay Siliconix - N-Channel 60 V 5V, 10V 990mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 3Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-205AD (TO-39) MOSFET (Metal Oxide) -
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2N6661

2N6661
VISHAY SILICONIX

   

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N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
核友型号：zp2216-2N6661-ND@0

Vishay Siliconix - N-Channel 90 V 5V, 10V 860mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 4Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-39 MOSFET (Metal Oxide) -
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2N6661-2

2N6661-2
VISHAY SILICONIX

   

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N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
核友型号：zp2216-2N6661-2-ND@0

Vishay Siliconix - N-Channel 90 V 5V, 10V 860mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 4Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-39 MOSFET (Metal Oxide) -
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2N6661-E3

2N6661-E3
VISHAY SILICONIX

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N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
核友型号：zp2216-2N6661-E3-ND@0

Vishay Siliconix - N-Channel 90 V 5V, 10V 860mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 4Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-39 MOSFET (Metal Oxide) -
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2N6661JTVP02

2N6661JTVP02
VISHAY SILICONIX

   

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N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
核友型号：zp2216-2N6661JTVP02-ND@0

Vishay Siliconix - N-Channel 90 V 5V, 10V 860mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 4Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-39 MOSFET (Metal Oxide) -
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2N6661JTX02

2N6661JTX02
VISHAY SILICONIX

   

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N-Channel 90 V 860mA (Tc) 725mW (Ta), 6.25W (Tc) Through Hole TO-39
核友型号：zp2216-2N6661JTX02-ND@0

Vishay Siliconix - N-Channel 90 V 5V, 10V 860mA (Tc) 50 pF @ 25 V 725mW (Ta), 6.25W (Tc) 4Ohm @ 1A, 10V 2V @ 1mA ±20V -55°C ~ 150°C (TJ) Through Hole TO-39 MOSFET (Metal Oxide) -

Recommended Rectifiers - FETs