RCD080N25TL

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Please see Product Specifications
for details.


Documents

DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
FETタイプNチャンネル
ドレイン~ソース間電圧(Vdss)250V
駆動電圧(最大Rdsオン、最小Rdsオン)10V
電流 - 25°Cでの連続ドレイン(Id)8A(TA)
Vds印加時の入力静電容量(Ciss)(最大)1440pF @ 25 V
電力散逸(最大)850mW(Ta)、20W(Tc)
Id、Vgs印加時のRds On(最大)300リオーム @ 4A、10V
Id印加時のVgs(th)(最大)5V @ 1mA
Vgs(最大)±30V
技術MOSFET(金属酸化物)
FET機能標準
使用温度範囲150°C(TJ)
取り付けタイプ面実装
デバイスパッケージCPT3

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

In Stock: 4,669

MOQ:1

SPQ:1

Scheduled Incoming Stock (back-order): 0

Quantity

Unit Price Total
QuantityUnit Price
1 - 19 $1.178
20 - 49 $0.732
50 - 99 $0.554
100 - 299 $0.495
300 - 499 $0.455
500 - 999 $0.447
1,000 - 3,999 $0.441
4,000 - $0.437

Alternative Part Number(s)

PHD108NQ03LT,118

NXP Semiconductors