2SC5354-1(F)
商品說明
Category | Discrete semiconductors Discrete single |
Manufacturer | TOSHIBA |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Maximum) | 800 V |
Current - Collector (Ic) (Max) | 5.0 A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 1mA/5V |
Power - Maximum | 100 W |
Vce saturation (max) @lb, Ic | 1V@400mA/2A |
Mounting Type | Through Hole |
Device Package | TO-3P(N) |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
庫存量: 0
MOQ:1
SPQ:1
預定入貨數量(延期交貨): 500