SI2333DS-T1-E3
當本公司管有此產品的不同批次時、產品的外觀及包裝並不一定如以上圖像所示。
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文件
商品說明
| Case/Package | TO-236 |
| Continuous Drain Current (ID) | -4.1 A |
| Drain to Source Breakdown Voltage | -12 V |
| Drain to Source Resistance | 25 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Element Configuration | Single |
| Fall Time | 45 ns |
| Gate to Source Voltage (Vgs) | 8 V |
| Height | 1.12 mm |
| Input Capacitance | 1.1 nF |
| Lead Free | Lead Free |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 750 mW |
| Min Operating Temperature | -55 °C |
| Mount | Surface Mount |
| Nominal Vgs | -1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Packaging | Cut Tape |
| Power Dissipation | 750 mW |
| Radiation Hardening | No |
| Rds On Max | 32 mΩ |
| REACH SVHC | Unknown |
| Resistance | 32 mΩ |
| Rise Time | 45 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | -1 V |
| Turn-Off Delay Time | 72 ns |
| Turn-On Delay Time | 25 ns |
| Weight | 1.437803 g |
| Width | 1.4 mm |
・This information is intended to provide a brief overview of the item.
・For a more comprehensive explanation of this product, please refer to the manufacturer's
official data sheet.
庫存量: 574
MOQ:1
SPQ:1
預定入貨數量(延期交貨): 0
| 購買數量 | 單價(FOB JAPAN) |
|---|---|
| 1 - 19 | $1.125 |
| 20 - 49 | $0.712 |
| 50 - 99 | $0.534 |
| 100 - 299 | $0.475 |
| 300 - 499 | $0.436 |
| 500 - 999 | $0.428 |
| 1,000 - 3,999 | $0.422 |
| 4,000 - | $0.418 |
